This invention discloses an automatically target-changing
pulsed laser deposition apparatus and method. The apparatus includes a process chamber, a transfer valve, and a buffer chamber. The process chamber is connected to the buffer chamber via the transfer valve and is configured as an internal
vacuum chamber. The buffer chamber has a door at its upper part and operates as a
vacuum chamber. A sample stage is located on the upper inner side of the process chamber. Two neck tubes are located on the two sides of the process chamber for guiding an external
laser source and mounting a
laser detection device, respectively. The process chamber also includes a rotatable target stage for loading and unloading targets from the buffer chamber. The buffer chamber includes a rotating target stage mechanism and a vision camera for placing the target material and recording the bottom features of the target material, respectively. This invention provides an automatically target-changing
pulsed laser deposition apparatus and method with a compact structure, precise positioning, and automatic target changing capabilities, enabling
fully automated deposition of ultrapure thin films.