37results about How to "Eliminate Large Particle Defects" patented technology

The invention relates to a multi-stage magnetic field straight pipe magnetic filtration and pulsed bias compounded electrical arc ion plating method, and belongs to the technical field of material surface treatments. In the prior art, plasma transmission efficiency is low and pulsed bias can not completely remove large particles due to applying of magnetic filtration on an arc source. A purpose of the present invention is to solve problems in the prior art. The method comprises: 1, connecting a workpiece to a pulsed bias power supply, connecting an electrical arc ion plating target source to a target power supply, and connecting a multi-stage magnetic field straight pipe magnetic filtration device in front of the target source; 2, carrying out thin film deposition, wherein work gas is introduced until achieving 0.01-10 Pa when a pressure in a vacuum chamber is less than 10<-2> Pa, the pulsed bias power supply is opened, a pulsed bias amplitude value, frequency and a duty ratio are adjusted, the target power supply is opened, plasma is generated, the multi-stage magnetic field straight pipe magnetic filtration device is opened, removal of large particles and efficient transmission of the plasma in the magnetic filtration device are achieved, process parameters are adjusted, and a thin film with no large particle defect is rapidly produced; and 3, adopting a single-stage magnetic field to combine direct current/pulsed bias to obtain a thin film with a certain thickness.

The invention relates to a multistage magnetic field electric arc iron plating method adopting lining positive bias tapered pipe and straight pipe compositing and belongs to the technical field of material surface treatment. The problem of losses in the process of pollution cleaning of macroparticles and deposited irons to the inner wall of a pipe and transmitting of electric arc plasma in a filtering device of a multistage magnetic field is solved. The method comprises the following steps that firstly, a workpiece to be subjected to film plating is placed on a sample table in a vacuum chamber, relative power supplies are powered on, and an external water-cooling system is started; secondly, a thin film is deposited, specifically, when the vacuum degree in the vacuum chamber is smaller than 10<-4> Pa, working air is pumped in, air pressure is adjusted, and a film plating power supply is started; meanwhile, a bias power supply is utilized to attract electric arc plasma in an outlet, and energy is adjusted; by means of the self obstructing shield of a lining positive bias tapered pipe and straight pipe compositing device, the inhibiting effect of a positive bias electric field and the filtering effect of the multistage magnetic field, the macroparticile defect is effectively eliminated, and the transmitting efficiency of the electric arc plasma is guaranteed; and the needed process parameters are set to prepare the thin film.

The invention discloses a composite vacuum deposition method of a combination magnetic field, a lining special-shaped tube and a porous baffle, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a target source of arc ion plating, a multistage magnetic field device, a lining bias voltage special-shaped tube and porous baffle combination device, a movable coil device, a high power pulsed magnetron sputtering target source and relevant power supply, a waveform matching device, a bias voltage power supply, and the like;and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamber is less than 10<-4>Pa, a platingpower supply is turned on, the bias voltage power supply regulates energy of the plasma, the combination magnetic field and the lining special-shaped tube and porous baffle device eliminate large particle defects and guide transmission of the composite plasma, the loss in the vacuum chamber is reduced, and preparation technological parameters are set.

The invention discloses a combined magnetic field and lining bias voltage conical pipe composite vacuum deposition method, belongs to the technical field of material surface treatment, and aims at solving the problems about film pollution through large particles, the target material usage limit, magnetic filter arc plasma losses, unstable high-power pulse magnetron sputtering discharge and the like in arc ion plating. The device comprises a bias voltage power source, an arc ion plating target source and power source, a multi-level magnetic field device and power source, a lining bias voltage conical pipe device and bias voltage power source, a movable coil device and power source, a waveform matching device, a high-power pulse magnetron sputtering target source and power source and other devices. Film deposition is conducted, device connection is conducted, the system is started, and when the vacuum degree in a vacuum chamber is smaller than 10<-4>Pa, inflation of work gas is conducted, a coating power source is started, and the bias voltage power source adjusts plasma energy; and the multi-level magnetic field device and the movable coil device eliminate large particle defects andguiding composite plasma transmission, losses in the vacuum chamber are reduced, and preparing technology parameters are set.

The invention discloses a composite deposition method combined magnetic field arc ion plating and high-power pulse magnetron sputtering, and belongs to the technical field of material surface treatment. The problems such as pollution of macroparticles to thin films and the use limitation of target materials in the arc ion plating, and the losses of arc plasmas and the instability of high-power pulse magnetron sputtering discharge in the transmission process of a magnetic filter device are solved. Devices relating to the composite deposition method combined the magnetic field arc ion plating and the high-power pulse magnetron sputtering comprise a bias voltage power source, an arc ion plating target source, a power source of the arc ion plating target source, a multi-stage magnetic field device, a power source of the multi-stage magnetic field device, a movable coil device, a power source of the movable coil device, a waveform matching device, a high-power pulse magnetron sputtering target source, a power source of the high-power pulse magnetron sputtering target source, an oscilloscope and a vacuum chamber. The thin film deposition comprises the steps that the devices are connected, and a system is started; and when a vacuum degree in the vacuum chamber is less than 10<-4> Pa, a working gas is introduced, and a film plating power source is turned on. The bias voltage power source adjusts the energy of plasmas, the multi-stage magnetic field device and the movable coil device eliminate macroparticle defects and guide the transmission of composite plasmas, the losses in the vacuum chamber are reduced, and technological parameters are set.

The invention discloses a combined magnetic field and lining conical pipe and ladder pipe composite vacuum coating method, and belongs to the technical field of material surface treatment. The problems that during arc ion plating, due to macroparticles, a thin film is polluted, target use is limited, magnetically filtered arc plasmas are damaged, and high-power pulse magnetic control discharge isnot stable are solved. A device comprises an arc ion plating target source, a multi-stage magnetic field device, a movable coil device, a twin target high-power pulse magnetron sputtering target source, a lining bias conical pipe and ladder pipe combined device and related power source, a grid bias power supply, a waveform matching device and the like. The method comprises the steps of thin film deposition, device connecting and system starting. When the vacuum degree in a vacuum chamber is smaller than 10<-4> Pa, work gas is led in, a coating power source is started, energy of plasmas can beadjusted through the grid bias power supply, the multi-stage magnetic field device and the movable coil device remove macroparticle defects and guide transmission of composite plasmas, losses in the vacuum chamber are reduced, and process parameters are set.

The invention discloses a vacuum film plating method with a combined magnetic field, a lined straight pipe and a multihole baffle combined, and belongs to the technical field of material surface treatment. The vacuum film plating method with the combined magnetic field, the lined straight pipe and the multihole baffle combined aims to solve the problems such as the pollution of macroparticles to athin film, the use limitation of a target material, the loss of magnetically-filtered arc plasma and the instability of high-power pulsed magnetron sputtering discharge in arc ion plating. Devices relating to the vacuum film plating method comprise a bias voltage power source, an arc ion plating target source, a power source of the arc ion plating target source, a multistage magnetic field device, a power source of the multistage magnetic field device, a movable coil device, a power source of the movable coil device, a waveform matching device, a high-power pulsed magnetron sputtering targetsource, a power source of the high-power pulsed magnetron sputtering target source, a combined device of the lined bias voltage straight pipe and the multihole baffle, a power source of the combined device of the lined bias voltage straight pipe and the multihole baffle and the like. Thin film deposition comprises the steps that the devices are connected; a system is started; when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, a working gas is introduced into the vacuum chamber, a film plating power source is started, the bias voltage power source adjusts the energy of the plasma, the multistage magnetic field device and the movable coil device eliminate defects of the macroparticles and guide the transmission of the composite plasma, the loss in the vacuum chamber is reduced, and technical parameters are set.

The invention provides arc ion plating with combination of the magnetic field and lining tapered tube and straight tube composite filtration, and belongs to the technical field of material surface treatment in order to solve the problems of thin film pollution caused by large particles in a multistage magnetic field filtration device and loss in a plasma transfer process. A device for the arc ionplating comprises a bias power supply, an arc ion plating target source, an arc ion plating target source power supply, a multistage magnetic field device, a multistage magnetic field power supply, alining bias tapered tube and straight tube combination device, a lining bias power supply, a movable coil device, a movable coil device power supply, a sample table, a bias power supply waveform oscilloscope and a vacuum chamber. Thin film deposition comprises steps that devices are connected, a system is started, when vacuum degree in a vacuum chamber is lower than 10<-4> Pa, working gas is introduced, the plating power supply and the bias power supply are started to adjust energy of arc plasma, large particles in the arc plasma are eliminated by the lining bias tapered tube and straight tubecombination device and the multistage magnetic field device, transmission efficiency of the large particles in the filtration device is improved, loss in the vacuum chamber is reduced, and parametersare set for preparation of a thin film.

The invention provides a multi-stage magnetic field electric-arc ion plating method for a lining positive-bias step-shaped pipe and belongs to the technical field of material surface treatment. According to the multi-stage magnetic field electric-arc ion plating method, cleaning of the inner wall, polluted by large particles and deposited ions in a multi-stage magnetic field filtering device, of the pipe is achieved, and the loss in the transferring process of electric-arc plasma is avoided. The multi-stage magnetic field electric-arc ion plating method comprises the following steps that (1) a to-be-film-plated workpiece is placed on a sample table in a vacuum room, a relevant power source is switched on, and an external water-cooling system is started; and (2) thin film deposition is conducted, specifically, when the vacuum degree in the vacuum room is smaller than 10 <-4> Pa, working gas is pumped in, the gas pressure is adjusted, a film plating power source is started; meanwhile, a bias power source is used for attracting the electric-arc plasma at an outlet and conducting energy adjustment; through stop shielding of the lining positive-bias step-shaped pipe, the inhibiting effect of a positive-bias electric field and the filtering effect of a multi-stage magnetic field, large particle defects are effectively eliminated, and transferring efficiency of the electric-arc plasma is guaranteed; and needed technological parameters are set for thin film preparation.

The invention provides a movable magnetic field arc ion plating and high-power pulse magnetron sputtering composite deposition method, and belongs to the technical field of material surface treatment.The method aims at solving the problems of contamination of large particles in arc ion plating to thin films, the use limitations of target materials, losses of arc plasma in the transmitting processof a magnetic filtering device, the instability of high-power pulse magnetron sputtering and the like. A device comprises a bias power source, an arc ion plating target source, an arc ion plating target source power source, a movable coil device, a movable coil device power source, a waveform matching device, a high-power pulse magnetron sputtering target source, a high-power pulse magnetron sputtering target source power source, an oscilloscope and a vacuum chamber. The thin films are deposited, wherein the device is connected, a system is started, when the vacuum degree in the vacuum chamber is smaller than 10-4 Pa, working gas is introduced, a plating power source is switched on, the bias power source is used for adjusting energy of arc plasma, large particle defects are eliminated andtransmitting of the composite plasma is guided through the movable coil device, losses in the vacuum chamber are reduced, process parameters are set, and the thin films are prepared.

The invention provides a vacuum film-coating method through a combined magnetic field and compounding of a lining special-shaped pipe and a porous baffle, and belongs to the technical field of material surface treatment. The vacuum film-coating method is used for solving the problems of pollution of large particles to a film, target using limitation, loss of magnetic filtration arc plasma, instability of high-power pulse magnetron sputtering discharge and the like in arc ion plating. A device adopted by the vacuum film-coating method comprises an arc ion plating target source, a multi-stage magnetic field device, a lining bias-voltage special-shaped pipe and multi-porous baffle combination device, a movable coil device, a twin target high-power pulse magnetron sputtering target source andrelated power supply, a waveform matching device, a grid bias power supply and the like. Film deposition is conducted, specifically, the device is connected, a system is started, when the vacuum degree in a vacuum chamber is less than 10<-4> Pa, working gas is introduced, a film-coating power supply is started, energy of the plasma is adjusted through the grid bias power supply, the combined magnetic field, the lining special-shaped pipe and a porous baffle device eliminate the defects of the large particles and guide transmission of the compound plasma, loss of the plasma in the vacuum chamber is reduced, and preparation process parameters are set.

The invention discloses a combination magnetic field and lining tapered tube-porous baffle compounded vacuum deposition method, and belongs to the technical field of material surface treatment. In order to solve the problems of pollution to thin films by macroparticles in arc ion plating, target material using restrictions, magnetic filtration arc plasma losses, high-power pulse magnetron sputtering discharge instability and the like, the device disclosed in the invention comprises a grid bias power source, an arc ion plating target source and power source, a multistage magnetic field device and power source, a lining bias tapered tube and porous baffle combination device and power source, a movable coil device and power source, a waveform matching device, a high-power pulse magnetron sputtering target source and power source and other devices. Thin film deposition is conducted, the devices are connected and the system is started. When the vacuum degree of the inside of a vacuum chamber is smaller than 10<-4>Pa, working gas is connected in, a film coating power source is started, the grid bias power source can adjust the energy of plasma, the combination device can remove macroparticle defects and guide composite plasma conveyance, losses in the vacuum chamber are reduced and technological parameters are set.

The invention discloses a lining positive bias porous baffle multi-level magnetic field arc ion plating method, belongs to the technical field of material surface treatment and aims at achieving the aim about removal of macroparticles and deposition ions polluting the pipe inner wall in a multi-level magnetic field filtering device and solving the problem about losses of arc plasmas in the transmitting process. The method comprises the steps that firstly, a workpiece to be coated is placed on a sample table in a vacuum chamber, a related power source is turned on, and an outer water cooling system is started; secondly, film deposition is conducted, when the vacuum degree in the vacuum chamber is smaller than 10<-4>Pa, inflation of working gas is conducted, the air pressure is adjusted, a coating power source is started, and meanwhile a bias power source is utilized for attracting arc plasmas at the position of an outlet and conducting energy adjustment; and through stopping and shielding of a lining positive bias porous baffle device, the inhibiting effect of a positive bias electric field and the filtering effect of a multi-level magnetic field, the macroparticle defect is effectively overcome, the transmission efficiency of the arc plasmas is guaranteed, needed technology parameters are set, and film preparing is conducted.

The invention discloses a composite vacuum deposition method of a combination magnetic field, a lining stepped tube and a porous baffle, and belongs to the technical field of material surface treatment. The problems of contamination of thin films and target material usage restrictions by large particles, loss of magnetically filtered arc plasma, and instability of high power pulsed magnetron sputtering discharge in arc ion plating are solved. A device comprises a bias voltage power supply, an arc ion plating target source and power supply, a multistage magnetic field device and power supply, alining bias voltage stepped tube and porous baffle device and power supply, a movable coil device and power supply, a waveform matching device, a high power pulse magnetron sputtering target source and power sully, and other devices; and thin film deposition is conducted, specifically, the device is connected, a system is started, working gas is injected when the vacuum degree in a vacuum chamberis less than 10<-4> Pa, a plating power supply is turned on, the bias voltage power supply regulates energy of plasma, the multistage magnetic field device and movable coil device eliminate large particle defects and guide transmission of composite plasma, the loss in the vacuum chamber is reduced, and preparation technological parameters are set.

The invention provides a combined magnetic field and lining porous baffle combined vacuum deposition method and belongs to the technical field of material surface treatment. The combined magnetic field and lining porous baffle combined vacuum deposition method is provided for solving the problems of pollution of big particles to films, using restriction to target materials, losses of magnetic filtered electric arc plasmas, unstable discharge of high-power pulse magnetron sputtering and the like during arc ion plating. A device adopted in the method comprises a bias power supply, an arc ion plating target source, an arc ion plating power supply, a multi-stage magnetic field device, a multi-stage magnetic field device power supply, a lining bias voltage porous baffle device, a lining bias power supply, a movable coil device, a movable coil device power supply, a waveform matching device, a high-power pulse magnetron sputtering target source, a high-power pulse magnetron sputtering powersupply and the like. The method comprises the steps of depositing a film, connecting the device, starting the system, introducing working gas when the internal vacuum degree of a vacuum chamber is less than 10<-4> Pa, starting a film plating power supply, conducting adjustment on energy of plasmas through the bias power supply, eliminating big particle defects and guiding transmission of the plasmas through the multi-stage magnetic field device and the movable coil device, reducing loss in the vacuum chamber, and setting parameters of the preparation process.

The invention discloses a movable magnetic field arc ion plating and twin target high-power pulse magnetron sputtering method, belongs to the technical field of material surface treatment, and aims atsolving the problems about film pollution through large particles in arc ion plating, the target material usage limit, arc plasma losses in the magnetic filter device transmission process, unstable high-power pulse magnetron sputtering discharge and the like. The device comprises a bias voltage power source, an arc ion plating target source and power source, a movable coil device and power source, a waveform matching device, a twin target high-power pulse magnetron sputtering target source and power source, an oscilloscope and a vacuum chamber. Film deposition is conducted, device connectionis conducted, the system is started, and when the vacuum degree in the vacuum chamber is smaller than 10<-4>Pa, inflation of work gas is conducted, a coating power source is started, and the bias voltage power source is utilized for adjusting arc plasma energy; and the movable coil device is used for eliminating large particle defects and guiding the composite plasma transmission path, losses in the vacuum chamber are reduced, and technology parameters are set for film preparing.

The invention provides a combined magnetic field arc ion plating and twin-target high-power pulse magnetron sputtering method, and belongs to the technical field of material surface treatment. The method aims at solving the problems of contamination of large particles in arc ion plating to thin films, the use limitations of target materials, losses of magnetic filtering on arc plasma, the instability of high-power pulse magnetron sputtering and the like. A device comprises a bias power source, an arc ion plating target source, an arc ion plating target source power source, a multi-stage magnetic field device, a multi-stage magnetic field device power source, a movable coil device, a movable coil device power source, a waveform matching device, a twin-target high-power pulse magnetron sputtering target source, a twin-target high-power pulse magnetron sputtering target source power source, an oscilloscope and a vacuum chamber. The thin films are deposited, wherein the device is connected, a system is started, when the vacuum degree in the vacuum chamber is smaller than 10-4 Pa, working gas is introduced, a plating power source is switched on, the bias power source is used for adjusting energy of arc plasma, large particle defects are eliminated and transmitting of the composite plasma is guided through the multi-stage magnetic field device and the movable coil device, losses in the vacuum chamber are reduced, and preparation process parameters are set.

The invention discloses a combined magnetic field and lining bias voltage straight pipe composite vacuum deposition method, belongs to the technical field of material surface treatment, and aims at solving the problems about film pollution through large particles, the target material usage limit, magnetic filter arc plasma losses, unstable high-power pulse magnetron sputtering discharge and the like in arc ion plating. The device comprises a bias voltage power source, an arc ion plating target source and power source, a multi-level magnetic field device and power source, a lining bias voltagestraight pipe device and power source, a movable coil device and power source, a waveform matching device, a high-power pulse magnetron sputtering target source and power source and other devices. Film deposition is conducted, device connection is conducted, the system is started, and when the vacuum degree in a vacuum chamber is smaller than 10<-4>Pa, inflation of work gas is conducted, a coatingpower source is started, and the bias voltage power source adjusts plasma energy; and the multi-level magnetic field device and the movable coil device eliminate large particle defects and guiding composite plasma transmission, losses in the vacuum chamber are reduced, and preparing technology parameters are set.

The invention discloses arc ion plating adopting composite filtering of a combined magnetic field, a lined straight pipe and a multihole baffle, and belongs to the technical field of material surfacetreatment. The problems of pollution of macroparticles to thin films and losses in the plasma transmission process in a multi-stage magnetic field filter device are solved. Devices relating to the arcion plating adopting the composite filtering of the combined magnetic field, the lined straight pipe and the multihole baffle comprise a bias voltage power source, an arc ion plating target source, apower source of the arc ion plating target source, a multi-stage magnetic field device, a power source of the multi-stage magnetic field device, a lined bias voltage straight pipe and multihole baffle combined device, a bias voltage power source of the lined bias voltage straight pipe and multihole baffle combined device, a movable coil device, a power source of the movable coil device, a bias voltage power source waveform oscilloscope and a vacuum chamber. The thin film deposition comprises the steps that the devices are connected, and a system is started; and when a vacuum degree in the vacuum chamber is less than 10<-4> Pa, a working gas is introduced, and a film plating power source is turned on. The bias voltage power source adjusts the energy of arc plasmas, the lined bias voltage straight pipe, the multihole baffle composite device and the multi-stage magnetic field device eliminate macroparticle defects in the arc plasmas, and the transmission efficiency in the filter device is improved; and the losses in the vacuum chamber are reduced, technological parameters are set, and the preparation of the thin films is carried out.