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Compound filtering arc ion plating by combined magnetic fields and lining bias porous baffle plate

The technology of arc ion plating and porous baffle plate is applied in the field of arc ion plating, which can solve the problems of uniform ablation, pollution and large particle defects of target materials, and achieve the effect of improving utilization efficiency, ensuring uniformity and realizing effective control

Pending Publication Date: 2019-07-09
魏永强
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the traditional arc ion plating method adopts high melting point target material, low melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the curved magnetic filter technology causes arc. Low plasma transmission efficiency, limited use of target elements, uniform target ablation, film deposition density and defects, vacuum chamber space and deposition position limitations, workpiece shape limitations, and residues of different targets in multi-level magnetic field devices Combining the multi-stage magnetic field filtering method and the combination of the shape of the lined bias stepped tube and the porous baffle to eliminate the arc plasma At the same time, ensure that the arc plasma passes through the combination device of the lined bias straight tube and the porous baffle and the multi-stage magnetic field filter device with high transmission efficiency, and then use the movable coil device to control the multi-stage magnetic field device and The transmission direction of the arc plasma transmitted by the combination device of the lined bias stepped tube and the porous baffle in the vacuum chamber can realize the control and adjustment of the film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, and overcome the limitation of the vacuum chamber space. The problem of uneven film deposition caused by the limitation of the deposition position or the limitation of the substrate shape caused by the layout design of the target source can completely eliminate the arc plasma transmitted from the multi-level magnetic field device and the combination device of the lined bias straight tube and the porous baffle. There may be residual large particle defects, so that the ion energy can be adjusted on the surface of the workpiece under the condition of applying a negative bias voltage, and a continuous, dense and high-quality film can be prepared. At the same time, the control of the content of target elements in the film can be realized, and the production cost of using alloy targets can be reduced. , improve the transmission efficiency of arc plasma, increase the deposition rate of the film and reduce or even eliminate the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and service performance, a combination of magnetic field and lining bias porous baffle is proposed Composite Filtered Arc Ion Plating

Method used

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  • Compound filtering arc ion plating by combined magnetic fields and lining bias porous baffle plate
  • Compound filtering arc ion plating by combined magnetic fields and lining bias porous baffle plate
  • Compound filtering arc ion plating by combined magnetic fields and lining bias porous baffle plate

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specific Embodiment approach 1

[0020] Specific implementation mode one: the following combination figure 1 , 2 and 3 illustrate this embodiment, the device used in the arc ion plating combined magnetic field and lining bias porous baffle composite filter in this embodiment includes a bias power supply (1), an arc power supply (2), an arc ion plating target source ( 3), multi-stage magnetic field device (4), multi-stage magnetic field power supply (5), lining bias porous type baffle device (6), lining bias power supply (7), movable coil device (8), movable coil Device power supply (9), rheostat device (10), sample stage (11), bias power supply waveform oscilloscope (12) and vacuum chamber (13);

[0021] In this device:

[0022] The substrate workpiece to be processed is placed on the sample stage (11) in the vacuum chamber (13), the multi-stage magnetic field device (4), the lining bias porous type baffle device (6), the movable coil device (8) and the vacuum chamber (13) are insulated from each other, th...

specific Embodiment approach 2

[0036] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the device can also realize other functions: it can combine traditional DC magnetron sputtering, pulse magnetron sputtering, traditional arc ion plating and pulse cathode arc Combination of one or more than two methods, and then apply DC bias, pulse bias, DC pulse composite bias or bipolar pulse bias device on the workpiece for thin film deposition to prepare pure metal thin films and compounds with different element ratios Ceramic films, functional films and high-quality films with nano-multilayer or gradient structures.

specific Embodiment approach 3

[0037] Embodiment 3: The difference between this embodiment and Embodiment 2 is that the combined magnetic field is connected to the arc ion plating of the composite filter of the lining bias porous baffle, the arc power supply (2) is turned on, and the multi-stage magnetic field power supply ( 5) Adjust the multi-level magnetic field device (4), turn on the lining bias power supply (7), the lining bias porous type baffle device (6) maintains a positive DC bias, turn on the bias power supply (1), and turn on the movable coil The device power supply (9) adjusts the movable coil device (8), adjusts the output resistance of the rheostat device (10), adjusts the process parameters, performs film deposition, and prepares multi-layer structure films with different stress states, microstructures and element ratios. Embodiment 2 is the same.

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Abstract

The invention relates to compound filtering arc ion plating by combined magnetic fields and a lining bias porous baffle plate and belongs to the technical field of material surface treatment. The compound filtering arc ion plating by combined magnetic fields and the lining bias porous baffle plate solves the problems of pollution of macroparticles to a film in a multi-stage magnetic field device and loss in a plasma transmission process. A device comprises a bias power supply, an arc ion plating target source and a power supply, the multi-stage magnetic field device and a power supply, a lining bias porous baffle plate device and a bias power supply, a movable coil device and a power supply, a sample table, a bias power supply kymographion and a vacuum chamber. A film is prepared by the following step: depositing a film: connecting the device; starting a system; introducing working gas when the vacuum degree in a vacuum chamber is smaller than 10<-4> Pa; starting a coating power supply; adjusting the energy of arc plasma by using the bias power supply; eliminating macroparticle contamination in the arc plasma by means of the lining bias porous baffle plate device and the multi-stage magnetic field device and improving the transmission efficiency of the macroparticles in a filter device; reducing loss in the vacuum chamber; setting process parameters; and preparing the film.

Description

technical field [0001] The invention relates to an arc ion plating combined with a magnetic field and a lining bias porous baffle for composite filtration, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles per un...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32C23C14/56
CPCC23C14/325C23C14/564
Inventor 魏永强王好平刘源张华阳侯军兴蒋志强
Owner 魏永强
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