Multistage magnetic field electric arc iron plating method adopting lining positive bias tapered pipe and straight pipe compositing
A technology of arc ion plating and positive bias, which is applied in the field of material surface treatment, can solve the problems of large particle defects and low arc plasma transmission efficiency, improve crystal structure and stress state, avoid large particle defects, and improve bonding strength Effect
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specific Embodiment approach 1
[0015] Specific implementation mode one: the following combination figure 1 and 2 Describe this embodiment, the device used in the multi-stage magnetic field arc ion plating method of lining positive bias conical pipe and straight pipe composite in this embodiment includes bias power supply 1, arc power supply 2, arc ion plating target source 3, multi-stage Magnetic field device 4, multi-stage magnetic field power supply 5, liner positive bias tapered tube and straight tube composite device 6, positive bias power supply 7, sample stage 8, bias power supply waveform oscilloscope 9 and vacuum chamber 10;
[0016] The method includes the following steps:
[0017] Step 1, place the substrate workpiece to be processed on the sample stage 8 in the vacuum chamber 10, and insulate between the lining positive bias conical tube and the straight tube composite device 6 and the vacuum chamber 10 and the multi-stage magnetic field device 4, and the workpiece and The sample stage 8 is con...
specific Embodiment approach 2
[0026] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the method also includes:
[0027] Step 3: Thin films can be deposited by combining traditional DC magnetron sputtering, pulsed magnetron sputtering, traditional arc ion plating and pulsed cathodic arc with DC bias, pulse bias or DC pulse composite bias to prepare pure metal films , compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structures.
specific Embodiment approach 3
[0028] Embodiment 3: The difference between this embodiment and Embodiment 2 is that Steps 1 to 3 are repeated to prepare multi-layered thin films with different stress states, microstructures and element ratios, and the others are the same as Embodiment 2.
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