Arc ion plating adopting composite filtering of combined magnetic field, lined straight pipe and multihole baffle

Abstract

The invention discloses arc ion plating adopting composite filtering of a combined magnetic field, a lined straight pipe and a multihole baffle, and belongs to the technical field of material surfacetreatment. The problems of pollution of macroparticles to thin films and losses in the plasma transmission process in a multi-stage magnetic field filter device are solved. Devices relating to the arcion plating adopting the composite filtering of the combined magnetic field, the lined straight pipe and the multihole baffle comprise a bias voltage power source, an arc ion plating target source, apower source of the arc ion plating target source, a multi-stage magnetic field device, a power source of the multi-stage magnetic field device, a lined bias voltage straight pipe and multihole baffle combined device, a bias voltage power source of the lined bias voltage straight pipe and multihole baffle combined device, a movable coil device, a power source of the movable coil device, a bias voltage power source waveform oscilloscope and a vacuum chamber. The thin film deposition comprises the steps that the devices are connected, and a system is started; and when a vacuum degree in the vacuum chamber is less than 10<-4> Pa, a working gas is introduced, and a film plating power source is turned on. The bias voltage power source adjusts the energy of arc plasmas, the lined bias voltage straight pipe, the multihole baffle composite device and the multi-stage magnetic field device eliminate macroparticle defects in the arc plasmas, and the transmission efficiency in the filter device is improved; and the losses in the vacuum chamber are reduced, technological parameters are set, and the preparation of the thin films is carried out.

Description

technical field [0001] The invention relates to an arc ion plating combined with a magnetic field, a lined straight pipe and a porous baffle for composite filtration, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large parti...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the traditional arc ion plating method adopts high melting point target material, low melting point pure metal or multi-element alloy material and non-metallic material (such as graphite) as the target material, which is easy to produce large particle defects, and the curved magnetic filter technology causes arc. Low plasma transmission efficiency, limited use of target elements, uniform target ablation, film deposition density and defects, vacuum chamber space and deposition position limitations, workpiece shape limitations, and residues of different targets in multi-level magnetic field devices Combining the multi-stage magnetic field filtering method and the combination of the shape of the lined bias straight tube and the porous baffle to eliminate the arc plasma At the same time, ensure that the arc plasma passes through the combination device of the lined bias straight tube and the porous baffle and the multi-stage magnetic field filter device with high transmission efficiency, and then use the movable coil device to control the multi-stage magnetic field device and The transmission direction of the arc plasma transmitted by the combination device of the lined bias straight tube and the porous baffle in the vacuum chamber realizes the control and adjustment of the film deposition and film composition on the surface of the substrate workpiece at any position in the vacuum chamber, and overcomes the space constraints of the vacuum chamber. The problem of uneven film deposition caused by the limitation of the deposition position caused by the layout design of the target source or the limitation of the shape of the substrate can completely eliminate the arc plasma transmitted from the multi-level magnetic field device and the combination device of the lined bias straight tube and the porous baffle. The large particle defects that may remain allow the ion energy to be adjusted on the surface of the workpiece under the condition of applying a negative bias voltage, and a continuous, dense and high-quality film can be prepared. At the same time, the control of the content of target elements in the film can be achieved, and the production cost of using alloy targets can be reduced. To improve the transmission efficiency of arc plasma, increase the deposition rate of the film and reduce or even eliminate the adverse effects of large particle defects on the microstructure of the film, continuous dense deposition and performance, a combination of magnetic field and lined straight tube with porous baffle is proposed Arc Ion Plating with Composite Filtration

Images