Multi-level magnetic field arc ion plating method based on lined straight pipe and porous baffle
A technology of arc ion plating and porous baffles, which is applied in the field of material surface treatment, can solve the problems of large particle defects and low arc plasma transmission efficiency, improve crystal structure and stress state, avoid large particle defects, and improve transmission efficiency Effect
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specific Embodiment approach 1
[0015] Specific implementation mode one: the following combination figure 1 , figure 2 and image 3 Describe this embodiment, the device used in the multi-stage magnetic field arc ion plating method of the lined straight pipe and porous baffle composite type in this embodiment includes a bias power supply 1, an arc power supply 2, an arc ion plating target source 3, and a multi-stage magnetic field device 4. Multi-stage magnetic field power supply 5, composite device lined with positive bias straight tube and porous baffle 6, positive bias power supply 7, sample stage 8, bias power supply waveform oscilloscope 9 and vacuum chamber 10;
[0016] The method includes the following steps:
[0017] Step 1. Place the substrate workpiece to be processed on the sample stage 8 in the vacuum chamber 10, and insulate the composite device 6 lined with a positive bias straight tube and porous baffle plate from the vacuum chamber 10 and the multi-stage magnetic field device 4. The workpie...
specific Embodiment approach 2
[0026] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the method also includes:
[0027] Step 3: Thin films can be deposited by combining traditional DC magnetron sputtering, pulsed magnetron sputtering, traditional arc ion plating and pulsed cathodic arc with DC bias, pulse bias or DC pulse composite bias to prepare pure metal films , compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structures.
specific Embodiment approach 3
[0028] Embodiment 3: The difference between this embodiment and Embodiment 2 is that Steps 1 to 3 are repeated to prepare multi-layered thin films with different stress states, microstructures and element ratios, and the others are the same as Embodiment 2.
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