Lining step tube and porous baffle composite type multi-level magnetic field arc ion plating method
A technology of arc ion plating and porous baffles, which is applied in the field of material surface treatment, can solve the problems of low arc plasma transmission efficiency and large particle defects, so as to avoid large particle defects, improve crystal structure and stress state, and improve transmission efficiency Effect
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specific Embodiment approach 1
[0015] Specific embodiment one: the following combination figure 1 , figure 2 , image 3 and Figure 4 This embodiment will be described. The device used in the multi-stage magnetic field arc ion plating method of the composite type lined with stepped tubes and porous baffles in this embodiment includes a bias power supply 1, an arc power supply 2, an arc ion plating target source 3, and a multistage magnetic field device. 4. Multi-stage magnetic field power supply 5, compound device lined with positive bias step tube and porous baffle 6, positive bias power supply 7, sample stage 8, bias power waveform oscilloscope 9 and vacuum chamber 10;
[0016] The method includes the following steps:
[0017] Step 1. Place the workpiece of the substrate to be processed on the sample stage 8 in the vacuum chamber 10, lined with a positive bias step tube and a porous baffle composite device 6 and the vacuum chamber 10 and the multi-stage magnetic field device 4. And the sample stage 8...
specific Embodiment approach 2
[0026] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the method further includes:
[0027] Step 3: The pure metal thin film can be prepared by combining traditional DC magnetron sputtering, pulsed magnetron sputtering, traditional arc ion plating and pulse cathode arc with DC bias, pulse bias or DC pulse compound bias for film deposition , Compound ceramic films with different element ratios, functional films and high-quality films with nano-multilayer or gradient structure.
specific Embodiment approach 3
[0028] Embodiment 3: The difference between this embodiment and Embodiment 2 is that steps 1 to 3 are repeatedly performed to prepare multilayer structure films with different stress states, microstructures and element ratios. Others are the same as Embodiment 2.
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