Movable magnetic field arc ion plating and high-power pulse magnetron sputtering composite deposition method

Abstract

The invention provides a movable magnetic field arc ion plating and high-power pulse magnetron sputtering composite deposition method, and belongs to the technical field of material surface treatment.The method aims at solving the problems of contamination of large particles in arc ion plating to thin films, the use limitations of target materials, losses of arc plasma in the transmitting processof a magnetic filtering device, the instability of high-power pulse magnetron sputtering and the like. A device comprises a bias power source, an arc ion plating target source, an arc ion plating target source power source, a movable coil device, a movable coil device power source, a waveform matching device, a high-power pulse magnetron sputtering target source, a high-power pulse magnetron sputtering target source power source, an oscilloscope and a vacuum chamber. The thin films are deposited, wherein the device is connected, a system is started, when the vacuum degree in the vacuum chamber is smaller than 10-4 Pa, working gas is introduced, a plating power source is switched on, the bias power source is used for adjusting energy of arc plasma, large particle defects are eliminated andtransmitting of the composite plasma is guided through the movable coil device, losses in the vacuum chamber are reduced, process parameters are set, and the thin films are prepared.

Description

technical field [0001] The invention relates to a composite deposition method of active magnetic field arc ion plating and high-power pulse magnetron sputtering, and belongs to the technical field of material surface treatment. Background technique [0002] In the process of preparing thin films by arc ion plating, due to the arc spot current density as high as 2.5~5×10 10 A / m 2 , causing molten liquid metal to appear at the arc spot position on the target surface, which is splashed out in the form of droplets under the action of local plasma pressure, and adheres to the surface of the film or is embedded in the film to form "macroparticles" (Macroparticles) Defects (BoxmanR L, Goldsmith S. Macroparticle contamination in cathodic arc coatings: generation, transport and control [J]. Surf Coat Tech, 1992, 52(1): 39-50.). In the arc plasma, since the movement speed of electrons is much greater than that of ions, the number of electrons reaching the surface of large particles ...

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of low ionization rate and thin film deposition efficiency of traditional magnetron sputtering technology, the limitation of high melting point target material use, and the current high-power pulse magnetron sputtering. The plating method uses high melting point targets, low melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si) as targets that are prone to large particle defects, bending Low efficiency of arc plasma transmission caused by magnetic filter technology, limitation of target element usage, uniform ablation of target, thin film deposition density and defects, deposition position limitation and workpiece shape limitation caused by vacuum chamber space and target source layout design, etc. The problem is to use low-melting point pure metals (such as aluminum, tin) or multi-element alloy materials (such as AlSi alloys) and non-metallic materials (such as graphite and semiconductor materials Si, etc.) as targets for high-power pulse magnetron sputtering, and reuse The arc ion plating method realizes the high melting point hard-to-ion target material to produce continuous and stable plasma with high ionization rate, and combines the magnetic field constraint of the movable coil device and the composite effect of its own bias electric field att

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