Composite deposition method of multi-level magnetic field arc ion plating and high power pulse magnetron sputtering

Abstract

The invention discloses a multistage magnetic field arc ion plating and high power pulse magnetron sputtering compound deposition method, and belongs to the technical field of material surface treatment. According to the method, the problems of the low-melting-point pure metal or multi-component alloy material and nonmetallic materials (such as graphite) that particles in arc ion plating are large, the magnetron sputtering ionization rate and the deposition efficiency is low and the use of high-melting-point target materials is limited are solved, the electric discharge instability of the high power pulse magnetron sputtering is broken through, and the use range of the arc ion plating target materials is expanded. The method comprises the following steps: 1, placing a workpiece to be plated onto a sample table in a vacuum chamber, and switching in related power supplies; 2, conducting film deposition: when the vacuum degree in the vacuum chamber is less than 10<-2> Pa, introducing working gas and adjusting air pressure, turning on the film plating power supply, adjusting the output waveforms of the bias power supply and the magnetron sputtering power supply through a waveform synchronous matching device, utilizing a multistage magnetic field straight pipe magnetic filtering device to eliminate the large particle defect and ensure the transmission efficiency of arc plasmas, setting needed processing parameters, and conducting film deposition.

Description

technical field [0001] The invention relates to a composite deposition method of multistage magnetic field arc ion plating and high-power pulse magnetron sputtering, and belongs to the technical field of material surface treatment. Background technique [0002] Arc ion plating technology can obtain almost all metal ions including carbon ions. At the same time, it has the advantages of high ionization rate, good diffraction, good film-substrate bonding force, good coating quality, high deposition efficiency and easy operation of equipment. Attention is paid to it, and it is one of the physical vapor deposition preparation technologies widely used in industry at present. It can not only be used to prepare metal protective coatings, but also realize the preparation of high-temperature ceramic coatings such as nitrides and carbides through the adjustment of process methods, and it is also used in the field of functional thin films. Arc ion plating can achieve rapid deposition o...

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Problems solved by technology

[0010] The purpose of the present invention is to solve the problem that the traditional arc ion plating method is easy to produce large particle defects, the magnetic filter technology causes low arc plasma transmission efficiency, and the use of low melting point pure metal or multi-element alloy materials and non-metallic materials (such as graphite) as target materials In the traditional arc ion plating method, there are large particles, the ionization rate of the traditional magnetron sputtering technology and the low deposition efficiency of the film, the limitation of the use of high melting point targets and the instability of the current high-power pulse magnetron sputtering discharge. Pure metal or multi-element alloy materials and non-metallic materials (such as graphite) with low melting point are used as targets for high-power pulse magnetron sputtering, and arc ion plating is used to eliminate the discharge instability of high-power magnetron sputtering technology. Eliminate the use limitations of hard-to-ionized targets and the adverse effects of ion back-attraction effects on film deposition, and then eliminate the large particle defects contained in the arc plasma through the multi-stage magnetic field straight tube magnetic filtration method, and at the same time ensure that the arc plasma has a high The high transmission efficiency passes through the filter device, so that the surface of the workpiece can be continuously and densely prepared with a high-quality film under the condition of applying a negative bias voltage. At the same time, it can realize the control of the addition of elements in the film, reduce the production cost of using alloy targets, and improve the deposition efficiency of the film. To reduce the adverse effects of discharge instability and large particle defects on film growth and performance, a composite deposition method of multi-level magnetic field arc ion plating and high-power pulsed magnetron sputtering was proposed

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