Method for improving silicate nickel layer performance and method for forming PMOS transistor

Abstract

This invention relates to a method for forming SiNi2 layers and PMOS transistors, which first of all provides an n-type substrate of a grid structure to inject amorphous germanium onto the substrate , forms a source and a drain in the substrate of the two sides of the grid structure and anneals them, deposits a cover layer on the substrate and the grid structure and forms a Ni layer on the cover layer to be annealed, and the Ni layer is reacted with Si on the surface of the source and the drain to form a SiNi2 layer, eliminates unreacted Ni and cover layers to form a PMOS transistor after succeeded internal linking, in which, amorphous germanium is injected into n-type substrate before forming the source and the drain to turn monocrystal silicon in it to polysilicon then to be doped with germanium, therefore, Si2Ni4 will not be generated at the same time when the succeeded Ni layer reacts with the silicon substrate to form a SiNi2 layer nor peak phenomenon in the Si substrate.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method of the semiconductor device, in particular to a method for forming a P-type metal oxide semiconductor (hereinafter referred to as PMOS) transistor, and a method for improving a nickel silicide layer in the process of manufacturing the PMOS transistor. Background technique [0002] As the integration of semiconductor devices continues to increase, the critical dimensions associated with semiconductor devices continue to decrease, and low-resistivity interconnection paths become the key to fabricating dense, high-performance devices. Therefore, silicide and self-aligned silicide materials and processes have been widely used to reduce the surface resistance and contact resistance of the gate, source and drain of complementary metal oxide semiconductor (hereinafter referred to as CMOS) transistors, thereby reducing Resistor-capacitor delay time. In the known salicide technology, co...

AI Technical Summary

Problems solved by technology

[0011] However, the formation of the nickel silicide layer also has disadvantages in the process of manufacturing the PMOS transistor, that is, when there is tensile stress in the silicon substrate, nickel disilicide will be generated while the nickel silicide layer is formed, resulting in a spike phenomenon, which in turn leads to leakage current

Images