Method for preparing nano silicon carbide

A nano-silicon carbide and silicon carbide technology, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth and other directions, can solve the problems of high cost and no preparation of nano-silicon carbide.

Inactive Publication Date: 2008-04-09
CHINA UNIV OF GEOSCIENCES (WUHAN)
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of these raw materials are artificially synthesized, and the cost is relatively high
[000

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] The method for nano silicon carbide is carried out according to the following steps:

[0018] 1) Use vibration to remove impurities in plant cotton (tail cotton);

[0019] 2), put analytically pure silicon powder into a graphite crucible, then place the plant cotton treated in step 1) on the silicon powder, and cover the crucible;

[0020] 3), then put the crucible with the sample into the high-temperature vacuum furnace, and evacuate to 10 -3 After Pa, heat up to 600°C, hold for 30 minutes for carbonization, then heat up to 1400°C for 180 minutes for silicide, and then drop to room temperature with the furnace to produce nano-silicon carbide. The particle size of the prepared nano-silicon carbide is 3-5nm.

Embodiment 2

[0022] The method for nano silicon carbide is carried out according to the following steps:

[0023] 1) Use vibration to remove impurities in waste plant cotton;

[0024] 2), put the analytically pure silicon powder into the graphite crucible, then put the waste plant cotton treated in step 1) on the silicon powder, and cover the crucible;

[0025] 3), then put the crucible with the sample into the high-temperature vacuum furnace, and evacuate to 10 -3 After Pa, raise the temperature to 1000°C, hold for 30 minutes for carbonization, then raise the temperature to 1500°C for 150 minutes for silicide, and then lower the furnace to normal temperature to produce nano-silicon carbide with a particle size of 10-15nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a preparation method of nanometer carborundum. The preparation method of the nanometer carborundum has the steps that: firstly, sundries are removed from plant cotton; secondly, analytically pure ganister sand is put into a plumbago pot, the plant cotton which is processed in the step (1) is arranged on the ganister sand, and the plumbago pot is covered; thirdly, the plumbago pot which is filled with the plant cotton and the ganister sand in the step two is put into a high temperature vacuum furnace which is vacuumized to 10 to 3 Pa and then is heated to 600 DEG C to 1000 DEG C, charing for 30 minutes is performed under heat preservation, siliconization for 150 to 180 minutes is preformed under heat preservation after being heated to 1400 DEG C-1500 DEG C, and then the temperature of the plumbago pot is descended to a normal temperature along with the high temperature vacuum furnace, therefore, the nanometer carborundum is produced, and the diameter of the carborundum is between 3nm to 15nm. The invention is characterized in that the plant cotton, in particular to the waste cotton, is used as the material, the plant cotton performs the charing and the siliconization under vacuum condition, and therefore the nanometer carborundum is produced. The invention can be applied to other animal fiber and plant fiber, in particular to waste animal fiber and plant fiber, so as to produce the nanometer carborundum. The technology of the invention is relatively simpler.

Description

technical field [0001] The invention relates to a new method for preparing nano-silicon carbide, in particular to a method for preparing nano-silicon carbide by using plant cotton as a raw material. Background technique [0002] Nano-silicon carbide can be applied to nano-composite hard tools, hard alloys, heat-resistant and wear-resistant materials, dispersion-strengthened materials, lubricated dynamic bearings, crucibles, heat-resistant coatings, heat-dissipating surface coatings, anti-corrosion coatings and wave-absorbing coatings layer, etc., with wide application and good market prospect. [0003] At present, the methods for preparing nano-silicon carbide include: microwave method, sol-gel method, chemical vapor deposition method, and electrified heating evaporation method, and the process is relatively complicated. The raw materials currently used are: organometallic compounds, resins, ultrafine carbon black, ultrafine SiO 2 . Most of these raw materials are artific...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B31/36C30B29/36C30B1/10
Inventor 张德徐建梅苏言杰
Owner CHINA UNIV OF GEOSCIENCES (WUHAN)
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap