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Semiconductor film material ultraviolet permeability uniformity test system

A technology of thin film material and testing system, applied in transmittance measurement and other directions, to achieve the effect of non-destructive automatic testing and easy use

Inactive Publication Date: 2008-04-30
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a photoelectric detection system for testing the transmittance of semiconductor thin film materials to solve the problem of uniformity measurement of ultraviolet transmittance of semiconductor thin film materials

Method used

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  • Semiconductor film material ultraviolet permeability uniformity test system
  • Semiconductor film material ultraviolet permeability uniformity test system

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Embodiment Construction

[0024] Below this text is described in detail in conjunction with accompanying drawing of specification sheet and specific embodiment to each component of the test system of the present invention and measurement process:

[0025] According to Figure 1, we have established a UV transmittance uniformity test system for semiconductor thin film materials to detect the uniformity of UV transmittance of GaN semiconductor epitaxial thin film materials. The performance indicators of each component of the system are detailed as follows:

[0026] 1. Light source 1—A 500W xenon lamp is used, and the light source continuously outputs in the ultraviolet band (200nm~365nm).

[0027] 2. Monochromator 2—A monochromator with a grating line number of 1200 lp / mm is used, and the input slit is set to the largest diameter to increase the incident energy of the light source 1 entering the monochromator 2.

[0028] 3. Optical system 3—the front lens group 301 adopts a quartz lens with a focal length...

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Abstract

The invention discloses a test system on the evenness of transmittance of ultraviolet ray passing through the semi-conductor film material, and the test system is used for detecting the evenness of transmittance of ultraviolet ray passing through the semi-conductor film material. The test system consists of a light source, a monochromator, an optical system, a two-dimensional progressive scanner, a signal receiver, a data process device and a computer. The system utilizes the characteristic that the transmittance of the ultraviolet band semi-conductor extending material is really sensitive around the absorbing edge, and detects and analyzes the face distribution of the transmittance in the related wavelength around the absorbing edge, thereby giving a quantitative analysis and evaluation on the evenness of the material.

Description

technical field [0001] The invention relates to a technology for testing the transmittance of semiconductor thin film materials, in particular to a test system for the uniformity of ultraviolet transmittance of semiconductor thin film materials, which is used for detection and evaluation of the uniformity of transmittance of semiconductor thin film materials. Background technique [0002] GaN-based semiconductor photon detectors replace vacuum tubes for ultraviolet detection, and have a significant application background. At the same time Al x Ga 1-x As a GaN-based ternary compound, N is also an excellent wide-bandgap semiconductor material with direct band gap and adjustable cut-off wavelength, making it a preferred material for the preparation of high-performance semiconductor ultraviolet detectors. However, the material quality is the bottleneck restricting the further improvement of GaN-based optoelectronic devices, due to the lack of and Al x Ga 1-x The substrate ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/59
Inventor 苏志国许金通张文静胡其欣袁永刚李向阳刘骥
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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