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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of semiconductor wafer thickness thinning, mass production performance deterioration, etc., and achieve good conduction voltage effect

Inactive Publication Date: 2008-04-30
MITSUBISHI ELECTRIC CORP
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  • Application Information

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Problems solved by technology

[0009] However, the thickness of semiconductor wafers for reverse conducting IGBTs becomes thinner after back grinding
Therefore, if heat treatment is performed after the back electrode is formed, the semiconductor wafer will warp due to the difference in thermal expansion coefficient between silicon and the back electrode, and there is a problem of deteriorating mass production performance.

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0022] Embodiments of the present invention will be described below with reference to the drawings.

[0023] see figure 1 , the semiconductor device of the embodiment of the present invention has an IGBT and a freewheeling diode formed on a cell region of a semiconductor substrate 20 . The semiconductor substrate 20 is composed of, for example, silicon doped with n-type impurities, and has a first main surface 20 a and a second main surface 20 b facing each other. The thickness of the semiconductor substrate 20 is preferably less than 150 μm.

[0024] The IGBT mainly has a semiconductor substrate 20 n - Semiconductor layer 1, p-type base region 2, n + Emitter region 3 , trench gate 5 and p-type collector region 9 . On the unit area of ​​the semiconductor substrate 20, in n - On the first main surface 20a side of the p-type semiconductor layer, a p-type base region 2 is selectively formed by diffusing p-type impurities. On the first main surface 20a in the p-type base reg...

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Abstract

A p-type collector region (9) of an IGBT and an n-type cathode region (10) of a free wheel diode are alternately formed in a second main surface (20b) of a semiconductor substrate (20). A back electrode (14) is formed on the second main surface (20b) so as to be in contact with both of the p-type collector region (9) and the n-type cathode region (10), and has a titanium layer (11), a nickel layer (12) and a gold layer (13) that are successively stacked from the side of the second main surface (20b). A semiconductor device capable of obtaining a satisfactory ON voltage in any of conduction of an insulated gate field effect transistor and conduction of the free wheel diode as well as a manufacturing method thereof can thus be obtained.

Description

technical field [0001] The present invention relates to a semiconductor device and its manufacturing method, and more specifically, to a semiconductor device having an insulated gate bipolar transistor and a freewheeling diode and its manufacturing method. Background technique [0002] In recent years, from the standpoint of energy saving, inverter circuits for controlling home appliances, industrial power equipment, and the like have been widely used. Inverter circuits use power semiconductor devices to repeatedly turn on and off voltage or current to control power. In this kind of inverter circuit, the rated voltage is above 300V. Starting from this characteristic, insulated gate bipolar transistors (hereinafter referred to as IGBTs) are mainly used. [0003] Inverter circuits often mainly drive inductive loads such as induction motors. In this case, counter electromotive force is generated from the inductive load, and therefore a freewheeling diode is required to return ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/06H01L29/43H01L21/822H01L21/28
CPCH01L29/7397H01L29/0834H01L29/456H01L29/66348
Inventor 铃木健司高桥英树友松佳史
Owner MITSUBISHI ELECTRIC CORP
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