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Electronic devices

An electronic device and device technology, applied in the field of electronic devices, can solve the problems of large disconnection current, increased electric rate, and low current on/off ratio of the device

Active Publication Date: 2013-06-12
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] It is believed that many semiconducting polymers are not stable when exposed to air because they are oxidatively doped by the surrounding oxygen, resulting in an increase in conductivity
The result is a high off current and hence a low current on / off ratio for devices fabricated from these materials

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment I

[0061] Add 1 g of 2,6-dibromo-4,8-dodedecylbenzo[1,2-b:4,5; b']dithiophene to a 100 ml 3-necked reaction flask (according to H.Pan , prepared by Y.Li, Y.Wu, P.Liu, B.S.Ong, S.Zhu, G.Xu, Chem.Mater., Vol.18, P.3237 (2006), the disclosure of which is hereby incorporated in its entirety as reference), 0.37 g of 3-methylthiophene-2-boronic acid pinacol ester, and 25 ml of toluene. The resulting mixture was stirred well and purged with argon. Then 0.04 g of tetrakis(triphenylphosphine palladium(O))(Pd(Ph 3 P) 4 ), 0.3 g Aliquat in 5 mL toluene, and 3.5 mL 2M aqueous Na 2 CO 3 . The resulting reaction mixture was stirred at 105°C for 26 hours. After cooling to room temperature, about 23 °C to about 26 °C, 100 mL of toluene was added, and the organic layer was washed 3 times with deionized water in a separatory funnel, washed over anhydrous MgSO 4 Dry and filter. After removal of the solvent, the residual solid was purified by column chromatography on silica gel (eluent: hexa...

Embodiment II

1) Synthesis of poly(4,8-dihexyl-2,6-bis-(3-hexyl-thiophen-2-yl)-benzo[1,2-b:4,5-b']dithiophene) ( 23) (reaction process 1)

(a) Preparation of benzo[1,2-b:4,5-b']dithiophene-4,8 according to Beimling, P.; Koβmehl, G.Chem.Ber.Vol.119, P.3198 (1986) - diketones, the disclosure of which is hereby incorporated by reference in its entirety.

(b) 4,8-dihexynyl (dihexynyl) benzo [1, 2-b: 4, 5-b'] dithiophene

[0067] To a solution of hexyne (6.71 g, 81.7 mmol) in THF (20 mL) in a 100 mL flask equipped with a condenser under an argon atmosphere was added dropwise 36 mL (72 mmol) of 2M chloride in THF at room temperature. isopropylmagnesium solution. An exothermic reaction occurred upon addition. After the addition, the reaction mixture was heated at 50° C. for 95 minutes and cooled to room temperature. Benzo[1,2-b:4,5-b']dithiophene-4,8-dione (3 g, 13.6 mmol) was added and the mixture was heated at 50°C for 1 hour before cooling to room temperature. Subsequently, 20 g of SnCl wa...

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Abstract

A polymer of the formula / structure wherein R, R′, and R″ are, for example, a suitable hydrocarbon, a halogen (halide) a hetero-containing group, or mixtures thereof; and n represents the number of repeating groups.

Description

technical field [0001] The present disclosure generally relates to semiconductors of the formulas described herein and methods of making and using the same. More specifically, the present disclosure relates, in embodiments, to novel polymers of the general formula described herein, and more particularly to poly(dithienylbenzo[1,2-b:4,5-b']bis Thiophene), which is selected as a semiconductor for polymer thin film transistors and can also be selected as a solution processable and substantially stable channel semiconductor in organic electronic devices such as thin film transistors and which when exposed to oxygen Transistors are stable in air over a period of time, ie do not degrade substantially. While not wishing to be bound by theory, it is believed that the presence of two thienylene functional groups in the semiconducting polymer promotes enhanced transistor performance such as field-effect mobility, e.g. 10 -2 cm -2 / v.s TFT field effect mobility. Background technique...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G61/12H01L51/00H01L51/05H01L51/30C07D519/00C07D495/04H10K99/00
CPCC08G2261/3243H01L51/0036C08G61/126C08G2261/3223C08G2261/149H01L51/0558H01L51/0043C08G2261/148H10K85/151H10K85/113H10K10/484
Inventor B·S·翁H·潘Y·李Y·吴P·刘
Owner SAMSUNG ELECTRONICS CO LTD