An organic EL part with ultra-thin layer structure
A layered, electroluminescent technology, applied in electroluminescent light sources, electric light sources, electrical components, etc., can solve the problems of difficult to repeat device performance impact, impact on industrialization, high manufacturing costs, etc., to achieve fast response speed, selection Wide range, reasonable and simple preparation method
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Embodiment 1
[0072] As shown in FIG. 2 , the light emitting layer 3 in the structure of the device includes a fluorescent material layer 31 emitting blue light, a phosphorescent material layer 32 emitting yellow light, and the hole blocking layer doubles as the electron transport layer 4 .
[0073] The fluorescent material layer emitting blue light of the device is NPB, and the phosphorescent material layer emitting yellow light is (tbt) 2 Ir(acac), the hole blocking layer is also used as the electron transport material BCP, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:
[0074] Glass substrate / ITO / NPB(30nm) / (tbt) 2 Ir(acac)(1nm) / BCP(20nm) / Mg:Ag100nm) preparation method is as follows:
[0075] ①Use detergent, ethanol solution and deionized water to ultrasonically clean the transparent conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. Wherein the ITO film on the glass substrate is used as the anode layer of the device, the...
Embodiment 2
[0083] As shown in FIG. 3 , the light emitting layer 3 in the structure of the device includes a fluorescent material layer 31 emitting blue light, a phosphorescent material layer 32 emitting yellow light, and the hole blocking layer doubles as the electron transport layer 4 .
[0084] The hole transport material of the device is NPB, the fluorescent material layer emitting blue light is NPB, and the phosphorescent material layer material emitting yellow light is (tbt) 2 Ir(acac), the hole blocking layer is also used as the electron transport material BCP, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:
[0085] Glass substrate / ITO / NPB(20nm) / (tbt) 2 Ir(acac)(1nm) / NPB(5nm) / BCP(20nm) / Mg:Ag(100nm)
[0086] The fabrication process of the device is similar to that of Example 1.
Embodiment 3
[0088] As shown in FIG. 3 , the light emitting layer 3 in the structure of the device includes a fluorescent material layer 31 emitting blue light, a phosphorescent material layer 32 emitting yellow light, and the hole blocking layer doubles as the electron transport layer 4 .
[0089] The hole transport material of the device is PVK, the fluorescent material layer emitting blue light is NPB, and the phosphorescent material layer emitting yellow light is (tbt) 2 Ir(acac), the hole blocking layer is also used as the electron transport material BCP, and the cathode layer uses Mg:Ag alloy. The entire device structure is described as:
[0090] Glass substrate / ITO / PVK(50nm) / (tbt) 2 Ir(acac)(1nm) / NPB(5nm) / BCP(20nm) / Mg:Ag(100nm)
[0091] ①Use detergent, ethanol solution and deionized water to ultrasonically clean the transparent substrate, and dry it with dry nitrogen after cleaning;
[0092] ②Transfer the transparent substrate to the vacuum evaporation chamber to prepare the elec...
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