Controllable terahertz wave attenuator device and its method

A terahertz wave and attenuator technology, applied in the field of terahertz wave applications, can solve the problems of few reports on terahertz wave attenuator research, complex device structure, high price, etc., to achieve compact structure, flat attenuation spectrum, cost low effect

Inactive Publication Date: 2008-05-28
CHINA JILIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing terahertz wave devices include terahertz wave generation and detection devices, terahertz wave transmission waveguides, but these devices are complex in structure, large in size and expensive, so miniaturized and low-cost terahertz wave devices are terahertz wave The key to technology application
At present, many scientific research institutions at home and abroad are committed to research in this area and have made some progress, but there are few reports on the research on terahertz wave attenuators.
The terahertz wave attenuator is a very important terahertz wave device, which can be used for terahertz wave system evaluation, research, adjustment and correction. At present, there is no controllable terahertz wave attenuator device and its technology at home and abroad

Method used

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  • Controllable terahertz wave attenuator device and its method
  • Controllable terahertz wave attenuator device and its method

Examples

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Embodiment 1

[0019] Terahertz wave attenuation at 0.3THz frequency:

[0020] Choose the BWOs sold by Microtech, where the return wave tube model is selected as QS-400 ov30 (the frequency is tunable in the 0.23-0.375THz frequency band), and the computer controls the BWO output wave to change in the 0.23-0.375THz frequency band. The designed high-resistance silicon thickness is h=430μm, the radius of the high-resistance silicon wafer is r=20mm, the resistivity of the high-resistance silicon is 10000Ωcm, the working wavelength of the argon ion laser is 514.5nm, and the power is 2W. The output frequency of BWO and the sample two-dimensional moving platform are simultaneously controlled by the computer, so that the terahertz wave of the corresponding frequency is focused on the preset middle position of high-resistance silicon. When the obtained argon ion laser is not applied, the transmittance of the terahertz wave passing through the terahertz wave attenuator is shown in Fig. Figure 2(b). T...

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Abstract

The invention discloses a controllable terahertz wave attenuator device and a method. The device is that a computer is connected respectively with a D / A converter and a two-dimensional moving platform, the D / A converter is connected with a direct current high voltage amplifier, a terahertz wave source device, a chopper, a piece of focusing lens, a high resistance silicon, a piece of focusing lens, a terahertz wave detector, a locking phase amplifier, an A / D converter, and the computer, the high-resistance silicon is connected respectively with an argon ion laser and the two-dimensional moving platform. The method is that lasers which are issued by the argon ion laser are used by the controllable terahertz wave attenuator device to excite photo-generated carriers; terahertz waves can be decreased through the absorbing effect of the photo-generated carriers to the terahertz waves. The controllable terahertz wave attenuator device of the invention has large decrement, smooth attenuating spectra ray, compact structure, convenient adjustment, low cost, and can satisfy the requirements of the terahertz waves for applying in the fields of imaging, medical diagnosis, safety check, information communication, space astronomy, and the like.

Description

technical field [0001] The invention belongs to the technical field of terahertz wave applications, and in particular relates to a controllable terahertz wave attenuator device and a method thereof. Background technique [0002] Terahertz (THz, 1THz=10E+12Hz) radiation usually refers to electromagnetic radiation waves with a frequency range of 0.1THz to 10THz. This band is located at the junction of electronics and optics. In the long wave direction, it overlaps with millimeter waves; In the shortwave direction, it overlaps with infrared. In the frequency domain, terahertz is in the transition zone from macroscopic classical theory to microscopic quantum theory. Due to its special location, terahertz waves exhibit a series of special properties different from other electromagnetic radiation: (1) The typical pulse width of terahertz pulses is on the sub-picosecond level, which can conveniently treat various materials (including Liquids, semiconductors, superconductors, biol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01G01N21/17G01N21/31G01N23/00H01S3/00
Inventor 李九生
Owner CHINA JILIANG UNIV
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