Method and structure of pattern mask for dry etching

Abstract

The present invention provides a structure for etching process. The structure has a mask for protecting an area of a wafer from being etched and a seal ring attached under a lower surface of the mask. The mask has at least one air opening to expose an area to be etched. Furthermore, the mask is attached on the wafer through the seal ring. In addition, the present invention provides also a method to form a mask for dry etching process. First, the present invention includes a step of providing a base material and coating the masking material on both sides of the base material. The next step is to pattern the masking material to form openings. Subsequently, the base material is etched through the openings to create at least one mask opening and a mask cavity. Finally, removing the mask material is performed.

Description

technical field [0001] The present invention relates to etching methods for packaging, and more particularly to dry etching methods utilizing patterned masks. Background technique [0002] In semiconductor processing, it is necessary to etch pre-deposited films and / or substrates. Generally, there are two etching processes, wet etching and dry etching. Wet etching uses a chemical reaction between a thin film and a specific chemical solution to remove areas not covered by photoresist. Because the above-mentioned etching method uses a chemical reaction to remove the film, the chemical reaction has no specific direction, so it is called isotropic etching. The disadvantage of wet etching is undercutting caused by etching isotropy. Dry etching, on the other hand, uses plasma to remove thin films, and its reaction is independent of chemical solutions. The purpose of dry etching is to create an anisotropic etch—meaning that the etch is directional. Anisotropic etching is import...

AI Technical Summary

Problems solved by technology

Its patterned mask does not require steps such as exposure or development

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