Making method for organic thin film transistor

An organic thin film and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as poor stability, difficult transistors, and difficulty in improving device performance, and achieve the effect of improving device performance.

Inactive Publication Date: 2008-05-28
BEIJING JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, in the production process of large-scale integrated circuits of these flexible substrates, the steps of lithography process and vacuum preparation process (for example: PVD, CVD, etc.) are used many times, so it is difficult to reduce the cost of device preparation. In the past, roll-to-roll (R2R) was used for large-scale production, and the research on solution-prepared organic thin film tran...

Method used

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  • Making method for organic thin film transistor
  • Making method for organic thin film transistor
  • Making method for organic thin film transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Step 1, cleaning the ITO glass sheet corroded with hydrochloric acid, the glass sheet is used as the substrate 101, and the ITO is used as the grid 102;

[0029] Step 2, plating silicon dioxide with a thickness of 250 nanometers on the ITO as the gate insulating layer 103;

[0030] The SD400M-MULTISOURCE ORGANICMOLECULAR VAPOR DEPOSITION SYSTEM inorganic coating equipment and NG-3 electron beam evaporation power supply produced by Shenyang Star Vacuum Technology Application Research Institute were used to prepare silicon dioxide films; coating conditions: system vacuum degree 9.8E-4Pa, The front stage vacuum degree is 1.0EOPa, the growth rate is 1 Ȧ / S, and the deposition time is 45 minutes;

[0031] Step 3, making the source electrode 104 and the drain electrode 105; the material used is gold, in the DEL multifunctional high vacuum system, the cavity vacuum degree is less than 3E-3Pa, and the source electrode 104 with a thickness of 70 nanometers is prepared by thermal ...

Embodiment 2

[0039] Other steps are the same as in Embodiment 1, the difference is that the material and the formation method of the organic semiconductor layer 107 are different; for the coating process of the organic semiconductor layer, TES thienyl pentacene is used, and the structural formula is

[0040]

[0041] Prepare a 4wt% toluene solution, spin-coat at 2000rpm for 60 seconds and deposit on the sheet, then anneal in air at 90°C for 2 minutes, the precursor of the pentacene derivative is converted into a pentacene film, and the organic semiconductor layer 107 is obtained. .

[0042] The structure of the organic thin film transistor is as follows: a substrate 101 , a gate 102 , a gate insulating layer 103 , a source 104 , a drain 105 , a surface modification layer 106 , and an organic semiconductor layer 107 .

[0043] Using the KEITHLEY 2410 source unit I-V test system to measure the I-V characteristic curve of organic thin film transistor devices, it is obtained that at differe...

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PUM

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Abstract

The invention relates to a manufacturing method of organic thin-film transistors, which is suitable for the fields of the display, the sensor, the radio frequency identification (RFID) of a label, etc. The organic thin-film transistors include the structure that a grid (102), a gate insulator layer (103), a source cathode (104), a drain (105), a surface modification layer (106) and an organic semiconductor layer are arranged on a basement (101) in sequence. The preparation of the organic semiconductor layer can be realized via the transformation of pentacene derivatives to pentacene crystal. Through the adoption of the method, the organic semiconductor material is spin-coated and printed in a large area via solution. The manufacture of the organic thin-film transistors in large scale integration with a flexible substrate is accomplished, and the manufacture cost of the integrated circuit with the organic thin-film transistors can be reduced. Simultaneously, the surface modification layer is formed in the source cathode and the drain via the OTS solution. The high mobility of the organic thin-film transistors, low leakage current and circuit working voltage can be further guaranteed.

Description

technical field [0001] The invention relates to a method for manufacturing an organic thin film transistor. Suitable for displays, sensors, radio frequency identification (RFID) tags and other fields. Background technique [0002] Flexible substrates, low cost, and low-temperature processes have greatly improved the opportunities for organic thin-film transistors (OTFTs) to be applied to large-area flexible electronic products. At the same time, organic integrated circuits can also be fabricated on cheap plastic substrates. , Form printed circuits, replace silicon chips, and can be mass-produced by printing, so that displays, sensors, smart cards, and radio frequency identification (RFID) tags can be brought to the market on a large scale. [0003] However, in the production process of large-scale integrated circuits of these flexible substrates, the steps of lithography process and vacuum preparation process (for example: PVD, CVD, etc.) are used many times, so it is diffi...

Claims

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Application Information

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IPC IPC(8): H01L51/40
Inventor 田雪雁徐征赵谡玲张福俊袁广才
Owner BEIJING JIAOTONG UNIV
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