Grids production method
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Publication Date
- 2008-06-11
- Estimated Expiration
- Not applicable Β· inactive patent
Smart Images
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Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a gate in a semiconductor device. Background technique
[0002] With the advancement of semiconductor manufacturing technology, the size of its gate is getting smaller and smaller, and the small gate line width can reduce the driving voltage of the formed device, thereby reducing power consumption; at the same time, it can reduce the size of the entire device formed Therefore, the industry always forms a smaller gate size through various methods. In the Chinese patent application number 200410093459, a process for reducing the gate line width is disclosed. Figure 1 to Figure 5 A schematic cross-sectional view of a structure corresponding to the process disclosed in said patent.
[0003] Such as figure 1 As shown, a semiconductor substrate 100 is first provided, a gate oxide layer 102 is formed on the semiconductor substrate 100, ...