Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for cleaning quartz parts surface in polycrystal etching cavity

A technology for etching chambers and parts is applied in the field of cleaning the surface of quartz parts in polycrystalline etching chambers, which can solve the problems of unsatisfactory cleaning effect, increased equipment maintenance cost, shortened service life of parts, etc.

Inactive Publication Date: 2008-07-16
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 30 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Most of the existing methods for cleaning quartz parts use a single organic solvent and chemical solution to scrub. The cleaning effect of this method is not very ideal, and the scrubbing is often repeated. The entire process takes a long time and is very inefficient.
And it is easy to damage the parts in the process of repeated processing, resulting in shortened service life of the parts, thus increasing the maintenance cost of the equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0045] A method for cleaning the surface of quartz parts in a polycrystalline etching chamber according to the present invention, its core is to clean the surface of the quartz parts with deionized water first, and dry the surface of the quartz parts with clean high-pressure gas; secondly, use at least one The surface of the quartz part is cleaned with an organic solvent; the surface of the quartz part is cleaned with an alkaline solution; the surface of the quartz part is then cleaned with at least one acidic solution; and finally the quartz part is ultrasonically cleaned. To achieve the purpose of removing deposits on the surface of quartz parts.

[0046] During plasma etch, plasma deposition, and plasma photoresist stripping processes, etch byproducts, deposition materials, photoresist stripping byproducts, and other materials can deposit on the surface of quartz parts in the process chamber. In the photoresist removal process chamber, the by-products of photoresist strippi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a cleaning method for cleaning quartz part surface in a polycrystal etching chamber, and the core of the method is that ionized water is adopted to clean the quartz part surface and clean high pressure air is applied to blowing and drying the surface of the quartz part; then at least an organic solvent is adopted to clean the quartz part surface and next alkali solvent is used for cleaning the surface which is followed by acid solvent; finally ultrasonic wave is adopted to clean the quartz part. Through the cleaning steps the deposited dirt on the quartz part surface can be removed. By adopting the technique in the cleaning of the quartz part surface which is used for a period of time in the polycrystal etching chamber, the contamination can be completely removed without any damage to the quartz part surface and the quartz part after being cleaned can fully meet the normal technique requirements.

Description

technical field [0001] The invention relates to a method for cleaning the surface of a part, in particular to a method for cleaning the surface of a quartz part in a polycrystalline etching chamber in a microelectronic process. Background technique [0002] In the process of microelectronics process and semiconductor polysilicon etching process, many by-products are often produced as the reaction proceeds. In the process environment of the reaction chamber, the by-products will undergo a series of split polymerization reactions and recombine into polymers with complex components and structures. [0003] Parts of quartz materials have superior properties, such as high temperature stability, low particle generation, strong resistance to plasma bombardment and corrosion of chemical gases, etc. It is widely used in semiconductor process equipment, especially in semiconductor process processes under strong chemical atmosphere and plasma corrosion, such as chemical vapor depositi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B08B3/08B08B3/12B08B7/04B08B1/00F26B5/00F26B3/02C11D7/50H01L21/00H01L21/3065C11D7/02
Inventor 童翔
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products