Method for cleaning ceramic parts surface in polysilicon etching cavity

A technology of ceramic material and etching cavity, which is applied in the cleaning method using tools, cleaning method using liquid, cleaning method and utensils, etc., which can solve the problem of easily damaged parts surface, time-consuming and labor-intensive cleaning process, and polymer cleaning effect. Not ideal and other problems, to achieve the effect of simple and convenient steps and ideal cleaning effect

Active Publication Date: 2010-02-03
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
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  • Application Information

AI Technical Summary

Problems solved by technology

ESC has been sprayed), this method is not only time-consuming and labor-intensive to remove the polymer, but also easy to damage the surface of the part, and the cleaning effect on the polymer is not ideal

Method used

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Embodiment Construction

[0030] A method for cleaning the surface of ceramic material parts in a polysilicon etching chamber according to the present invention, the core of which is to first clean the surface of the part with an organic solvent; then use an alkaline solution and an acidic solution to clean the surface of the part in sequence; finally , Put the parts into the ultrasonic tank, clean the set ultrasonic cleaning time, and perform ultrasonic cleaning of the parts. To achieve the purpose of removing deposits on the surface of parts.

[0031] Before using this method to clean, we used scanning electron microscope (SEM), energy spectrometer (EDS), secondary ion mass spectrometer (SMIC) to analyze the surface of the parts to be cleaned, and found that the polycrystalline etching after using for a period of time The deposits (pollutants) on the surface of the components in the chamber mainly include: organic impurities, metal impurities, electrode impurities, silicon impurities, fluoride impuri...

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Abstract

The invention relates to a cleaning method of the surface of ceramic component in a polysilicon etching cavity. By adopting organic solvents, alkaline solution, acid solution and ultrapure water to clean the components, the polymers attached on the surface of ceramic component in polysilicon etching cavity can be removed effectively. The invention also has the advantages of simple steps and idealcleaning effect without damnification of the ceramic component in polysilicon etching cavity. The ceramic component in polysilicon etching cavity used in the semiconductor process is cleaned for a certain period by applying semiconductor technique, so that the pollutants on the surface of ceramic component in a polysilicon etching cavity can be completely removed without damnification of the ceramic component in polysilicon etching cavity. The cleaned ceramic component in polysilicon etching cavity completely meets the normal technique requirements, thus the cleaning method completely achievesgood pollutants removal effect.

Description

technical field [0001] The invention relates to a method for cleaning the surface of a part, in particular to a method for cleaning the surface of a ceramic material part in a polysilicon etching chamber in a microelectronic process. Background technique [0002] With the development of semiconductor chip technology, the technology node has developed from 250nm to 65nm, or even below 45nm, and the size of silicon wafers has also increased from 200mm to 300mm. Under such circumstances, the cost of each silicon wafer becomes higher and higher . The technological requirements for processing silicon wafers are becoming more and more stringent. The processing of semiconductors needs to go through multiple processes, including deposition, photolithography, etching, etc. The etching process is one of the more complicated ones. The state of the plasma and various process parameters during the plasma etching process are related to the etching results. D. [0003] In the process of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/08B08B3/12B08B7/04B08B1/00C11D7/50F26B5/00F26B3/02H01L21/00H01L21/3065C11D7/04
Inventor 童翔
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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