Selective wet etching of oxides

A selective, oxide-based technology for electrical components, circuits, semiconductor/solid-state device manufacturing, etc., that solves problems such as unacceptable etching, loss of adhesion, unwanted

Inactive Publication Date: 2008-07-16
SACHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] A long standing problem with these conventional wet oxide etchants is their lack of selectivity
These wet etchants often attack surrounding structures, resulting in unwanted or unacceptable etch levels, or, partic...

Method used

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  • Selective wet etching of oxides
  • Selective wet etching of oxides
  • Selective wet etching of oxides

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Embodiment Construction

[0024] As used herein, a "composition" includes a mixture of materials including the composition as well as products formed between reactions or decomposition of materials comprising the composition.

[0025] As is known in the art, although not directly related, generally in wet etching, as the etch rate increases, the etch selectivity decreases. While it is important to achieve high etch rates to maintain productivity, it is equally or more important to achieve high selectivity. Thus, there is a need to balance these two desirable properties. Accordingly, the present invention provides a wet etch composition that maintains silicon oxidation relative to surrounding structures such as nitrides, high nitrogen content silicon oxynitrides, metals, silicon, suicides, photoresists, and other materials. A good balance between the etch rate and etch selectivity of the material.

[0026] Selective wet etch solutions are important for the design and manufacture of devices for state-o...

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Abstract

The present invention relates to a wet etching composition including a sulfonic acid, a phosphonic acid, a phosphinic acid or a mixture of any two or more thereof, and a fluoride, and to a process of selectively etching oxides relative to nitrides, high-nitrogen content silicon oxynitride, metal, silicon or silicide. The process includes providing a substrate comprising oxide and one or more of nitride, high-nitrogen content silicon oxynitride, metal, silicon or silicide in which the oxide is to be etched; applying to the substrate for a time sufficient to remove a desired quantity of oxide from the substrate the etching composition; and removing the etching composition, in which the oxide is removed selectively.

Description

technical field [0001] The present invention relates to the wet etching of oxides that are selective to surrounding structures or materials, such as silicon dioxide, phosphorous doped silica glass (PSG), boron and phosphorous doped silica glass (BPSG), boron doped Silica glass (BSG) and silicon oxynitride with high oxygen content, the surrounding structures or materials include nitrides such as silicon nitride and titanium titanium and their mixtures, silicon oxynitride with high nitrogen content, metals, including polysilicon and monocrystalline silicon, silicides and photoresists. Background technique [0002] The lithography process generally consists of the following steps. First, a layer of photoresist (PR) material is applied to the surface of the wafer by a suitable method such as spin coating. The PR layer is then selectively exposed to radiation such as ultraviolet light, electrons, or X-rays, where the exposed area is defined by an exposure tool, mask, or compute...

Claims

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Application Information

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IPC IPC(8): H01L21/311
CPCH01L21/31111H01L21/311H01L21/3063
Inventor 威廉·沃伊特恰克西安·科林斯
Owner SACHEM INC
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