Method for reducing CuxO resistance memory write operation current
A resistive memory and write operation technology, applied in the field of microelectronics, can solve the problems of excessive write operation current, low integration, occupying substrate silicon, etc., to avoid reactions, expand the selection range, and improve device stability.
Inactive Publication Date: 2008-07-23
FUDAN UNIV
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Problems solved by technology
Excessive write operation current (on the order of mA) has become the main problem of current resistive memory
High current requires MOS tubes with a large aspect ratio to drive. Generally speaking, MOS tubes need to occupy substrate silicon, which makes the larger the tube on a limited silicon substrate, the lower the integration and the higher the cost.
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[0018] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. In the drawings, the thicknesses of layers and regions are exaggerated for clarity, but as schematic diagrams, they should not be considered as strictly reflecting the proportional relationship of geometric dimensions.
[0019] The drawings referenced herein are schematic illustrations of idealized embodiments of the invention, and the illustrated embodiments of the invention should not be considered limited to the particular shapes of the regions shown in the drawings, but include resulting shapes, such as manufacturing-induced deviation. For example, the curves obtained by dry etching usually have curved or rounded characteristics, but in the illustrations of the embodiments of the present invention, they are all represented by rectangles, and the repre...
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Abstract
The invention belongs to the technical field of micro-electron, in particular to a method for reducing CuxO resistance memory writing operation current. Before a CuxO stores medium grows, a thin layer of Ta or Al layer which is 0.5-20nm is deposited on a Cu base, then a plasma is oxidized or is thermally oxidized, a TaO / CuxO or an AlO / CuxO composite structure is formed, the CuxO plays the role of storage medium, a TaO or an AlO layer is equivalent to a series resistance, thereby being capable of increasing the resistance of a memory in a low resistance state and reducing the writing operation current. After Ta or Al thin layer is covered on the Cu base, excessive oxygen plasmas or oxygen is blocked to contact with copper during oxidation process, and the CuxO without storage properties is avoided to produce. Further, an inert medium layer is covered on the CuxO layer, the selection range of an electrode material is capable of being enlarged, the reaction between lively electrode material and a CuxO material is eliminated, and the stability of a device is improved. The method has simple process and low cost, and is capable of observably improving the CuxO performance.
Description
technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a method for reducing Cu x O resistance memory write operation current method. Background technique [0002] Memory occupies an important position in the semiconductor market. Due to the continuous popularization of portable electronic devices, the share of non-volatile memory in the entire memory market is also increasing, of which more than 90% of the share is occupied by FLASH. However, due to the requirement of storing charges, the floating gate of FLASH cannot be thinned without limit with the development of technology generation. It is reported that the limit of FLASH technology is around 32nm, which forces people to look for the next generation of non-volatile memory with better performance. Recently, resistive switching memory (resistive switching memory) has attracted high attention because of its high density, low cost, and the characteristics of breaking thro...
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IPC IPC(8): H01L45/00H01L27/24G11C11/56G11C16/02
Inventor 林殷茵陈邦明吕杭炳
Owner FUDAN UNIV