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AIN crystal and method for growing the same, and AIN crystal substrate

A technology of crystal growth and substrate, applied in the field of AlN crystal substrate and AlN crystal growth, can solve the problems of decreasing the growth rate of AlN crystal and increasing the temperature of AlN crystal growth, etc.

Inactive Publication Date: 2008-07-30
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, especially in the case of using the top of the SiC seed substrate, the sublimation temperature of the SiC seed is 2300°C, which limits the increase of the AlN crystal growth temperature, which has resulted in a decrease in the AlN crystal growth rate.

Method used

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  • AIN crystal and method for growing the same, and AIN crystal substrate
  • AIN crystal and method for growing the same, and AIN crystal substrate
  • AIN crystal and method for growing the same, and AIN crystal substrate

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Experimental program
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Embodiment approach 1

[0034] The present embodiment is characterized in that: referring to FIGS. A carbon-containing gas produced by a reaction between AlN gas sources is supplied to the inside of the crystal growth chamber 24 .

[0035] In the present embodiment, with reference to Fig. 2, the crystal growth chamber 24 with the high temperature resistant material 21 as the wall and the carbon-containing gas production chamber 23 with the high temperature resistant material 21 and the crystal growth vessel 12 as the wall are formed in the crystal growth vessel 12 (graphite crucible) inside. Here, air circulates through crystal growth chamber 24 and carbon-containing gas production chamber 23 via opening portion 21h; Here, the crystal growth chamber 24 communicates with the carbon-containing gas production chamber 23 for ventilation via the opening portion 21h;

[0036] In this embodiment, with reference to FIGS. 1 and 2, the AlN source 1 is placed at one end of the crystal growth chamber 24 where ...

Embodiment approach 2

[0039] The present embodiment is characterized in that: referring to FIGS. 3 CO gas and / or CO gas produced by the reaction between the metal oxide gases produced 2 , is supplied to the inside of the crystal growth chamber 24 as a carbon-containing gas.

[0040] In this embodiment, with reference to Fig. 3, as in Embodiment 1, the crystal growth chamber 24 with the high temperature resistant material 21 as the wall, and the carbon-containing gas production chamber with the high temperature resistant material 21 and the crystal growth vessel 12 as the wall 23, formed in the crystal growth vessel 12 (graphite crucible). Here, air circulates through the crystal growth chamber 24 and the carbon-containing gas production chamber 23 via the opening portion 21h, and circulates through the carbon-containing gas production chamber 23 and the outside of the crystal growth vessel 12 via the opening portions 12h, 13a, 13b. Here, the crystal growth chamber 24 communicates with the carbon-...

Embodiment approach 3

[0045] This embodiment is a mode by which the carbon-containing gas is supplied directly from the outside of the reaction chamber 11 to the inside of the crystal growth chamber 24 in the crystal growth vessel provided in the reaction chamber 11 . Here, in order to control the carbon content in the gas supplied to the inside of the crystal growth chamber 4, a carbon-containing gas is supplied together with a carrier gas. As a carrier gas, use N, which does not react with carbon-containing gases 2 (nitrogen) gas and other gases. In addition, there is no specific limitation on the carbon-containing gas, but from the viewpoint of eliminating regions on the seed substrate 2 where crystals do not grow to efficiently grow large-diameter-span AlN crystals with good crystallinity, it is preferable to use CO gas and / or or CO 2 gas. In this embodiment, referring to FIG. 4 , a crystal growth chamber 24 is formed in a crystal growth vessel 12 (which may not be a graphite crucible) with ...

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Abstract

This invention provides an AlN crystal, which can be applied to various semiconductor devices, has a large diameter, and has good crystallinity, and a method for growing the same and an AlN crystal substrate. The method for growing an AlN crystal comprises growing an AlN crystal (4) on a seed crystal substrate (2) disposed within a crystal growth chamber (24) in a crystal growth container (12) provided within a reaction vessel by vapor growth and is characterized in that, in the growth of the crystal, a carbon-containing gas is fed into a crystal growth chamber (24).

Description

technical field [0001] The invention relates to a large-diameter and span AlN crystal with satisfactory crystallinity, which can be applied to various types of semiconductor devices, and relates to a method for growing AlN crystal and an AlN crystal substrate. Background technique [0002] Due to its remarkable semiconducting properties, AlN crystal is very useful as a material for fabricating various semiconductor devices including light emitting devices, electronic devices, and semiconductor sensors. To this end, it becomes crucial to grow large-diameter-span AlN crystals with good crystallinity. [0003] Proposed examples of how to grow such AlN crystals include various vapor phase growth methods such as sublimation, hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), and metal organic vapor deposition (MOCVD). Among these methods, sublimation is particularly preferably used from the viewpoint that satisfactory crystallinity can be grown and a small full wi...

Claims

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Application Information

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IPC IPC(8): C30B29/38
CPCC30B23/02C30B29/403C30B23/066C30B25/02Y10T428/2982C30B29/38C30B23/00
Inventor 水原奈保宫永伦正川濑智博藤原伸介
Owner SUMITOMO ELECTRIC IND LTD
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