Method for forming high quality tin oxide

A technology of tin oxide and a production method, applied in the field of solar photovoltaic materials, can solve the problems of high light loss, difficulty in obtaining velvet properties at the same time, defects in thin film photovoltaic devices, etc.

Inactive Publication Date: 2008-08-20
BEIJING XINGZHE MULTIMEDIA TECH
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  • Abstract
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Problems solved by technology

[0005] However, when the thickness of tin oxide does not exceed 1000 nanometers, it is difficult to make a high degree of surface texture or roughness, that is, its ability to scatter light is often unsatisfactory
Tin oxide with a rough surface often has poor electrical conductivity and high light loss, which limits the further improvement of the photoelectric efficiency of thin-film photovoltaic devices
There have been various attempts to make the surface texture of TCO more obvious, such as chemically or mechanically treating the deposited TCO film to make the surface rougher, but the roughness obtained by this method is not as good as Very good control and rep

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  • Method for forming high quality tin oxide
  • Method for forming high quality tin oxide

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Embodiment Construction

[0013] Below we use a two-step APCVD process to reveal the principle of the present invention. Such as figure 2 As shown, a fluorine-doped n-type tin oxide film 2 is deposited on a glass substrate 1, which is composed of a first layer of tin oxide 2A and a second layer of tin oxide 2B, these two layers of tin oxide are composed of different The deposition step is formed. The used APCVD equipment has a plurality of injectors arranged in sequence, and the glass substrate placed on a conveyor belt passes through the coating area provided by each injector in sequence. At least one coating zone is at a different temperature and supplied source gas mixture than the other zones. In this example, in the first step of forming the first layer of tin oxide 2A, the substrate temperature is 600°C, and the source gas mixture used includes tin tetrachloride (S n Cl 4 ), water vapor, methanol and hydrofluoric acid, the thickness of the formed first layer of tin oxide 2A tin oxide is not ...

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Abstract

The invention discloses a forming method of tin oxide with high quality. When an APCVD is used for making a low resistance with textures and highly transparent tin oxide films which are suitable for film solar cells, at first, a first layer tin oxide with textures and higher resistivity is deposited on a glass substrate, and then a second layer tin oxide with higher conductivity which is smooth itself is formed on the glass substrate. Compared with the traditional one-step formed tin oxide, the multi-step formed tin oxide is easier to satisfy various needs of film solar cells with high performance.

Description

technical field [0001] The invention belongs to the field of solar photovoltaic materials, in particular to the material technology of thin-film solar cells. Background technique [0002] In recent years, the development of photovoltaic cells and large-area photovoltaic modules has attracted widespread attention in the world. Hydrogenated amorphous silicon and nanocrystalline silicon, in particular, have shown great potential with the widespread adoption of photovoltaic devices in commercial and residential installations. A notable feature of producing thin-film silicon photovoltaic devices at such a low temperature below 260°C is that the large-area deposited silicon-related semiconductor film layers and electrical contact film layers have excellent performance. At the same time, using well-established coating equipment and procedures, low-cost stencils can be produced industrially. The laser patterning of different thin films applied on the same glass substrate allows mu...

Claims

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Application Information

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IPC IPC(8): C03C17/23C01G19/02
Inventor 李沅民马昕
Owner BEIJING XINGZHE MULTIMEDIA TECH
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