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Rapid response infrared detector and method for making same

A fast-response, infrared light technology, applied in the field of photodetectors, which can solve problems such as slow response time

Inactive Publication Date: 2008-09-10
CHINA UNIV OF PETROLEUM (BEIJING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, various types of laser detectors such as pyroelectric, photoelectric, and pyroelectric have been developed in the prior art, among which pyroelectric detectors are most commonly used. However, although pyroelectric detectors have a wide response range, their response time is relatively slow. It is millisecond level, so people are still exploring new laser detectors with fast response and high sensitivity

Method used

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  • Rapid response infrared detector and method for making same
  • Rapid response infrared detector and method for making same
  • Rapid response infrared detector and method for making same

Examples

Experimental program
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Effect test

Embodiment 1

[0026] Please refer to figure 1 , to prepare an Al-based 2 o 3 single crystal or Al 2 o 3 The preparation method of the infrared photodetector of thin film comprises the following steps:

[0027] 1. First, using the pulse laser film forming process, the Al 2 o 3 single crystal or Al 2 o 3 On the film, the silver film with an area of ​​5mm×1mm and a thickness of 1nm is evaporated on both sides by mask method;

[0028] 2. The samples made above, according to figure 1 The structure shown is made, the first electrode 2 and the second electrode 3 are vapor-deposited on 1 respectively, the first electrode lead 4 and the second electrode lead 5 are welded on the first electrode 2 and the second electrode 3 respectively, and A resistor 6 of 1 MΩ is connected in parallel between the first electrode lead 4 and the second electrode lead 5, and the output ends of the two electrode leads can be connected to a voltage measuring device 7. In this embodiment, an amplifying circuit or...

Embodiment 2

[0031] Please refer to figure 1 , to prepare an Al-based 2 o 3 single crystal or Al 2 o 3 The preparation method of the infrared photodetector of thin film comprises the following steps:

[0032] 1. First, using the magnetron sputtering film-making process, the Al 2 o 3 On the single crystal, the aluminum film with an area of ​​5mm×1mm and a thickness of 10μm is evaporated on both sides by mask method;

[0033] 2. The samples made above, according to figure 1 To make the structure shown, the first electrode lead 4 and the second electrode lead 5 are respectively welded on the first electrode 2 and the second electrode 3, and a 1MΩ electrode is connected in parallel between the first electrode lead 4 and the second electrode lead 5 The resistor 6 and the output terminals of the two electrode leads can be connected to a voltage measuring device 7, and an amplifier circuit or an oscilloscope is used in this embodiment.

[0034] The prepared detector probe is irradiated by a...

Embodiment 3

[0036] Please refer to figure 1 , to prepare an Al-based 2 o 3 single crystal or Al 2 o 3 The preparation method of the infrared photodetector of thin film comprises the following steps:

[0037] Will Al 2 o 3 single crystal or Al 2 o 3 film made as figure 1 The detector shown in the figure outputs a photovoltaic signal under the irradiation of a 980nm infrared laser.

[0038] 1. First, using a conventional spot welding machine, Al 2 o 3 An indium electrode with an area of ​​1 mm2 and a thickness of 1 μm is welded on the film;

[0039] 2. The samples made above, according to figure 1 To make the structure shown, the first electrode lead 4 and the second electrode lead 5 are welded on the first electrode 2 and the second electrode 3 respectively, and 0.1Ω is connected in parallel between the first electrode lead 4 and the second electrode lead 5 The resistor 6, the output terminals of the two electrode leads can be connected to a voltage measuring device 7, and an ...

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Abstract

The invention provides a fast response infrared detector and a preparation method thereof. The infrared detector comprises a light response layer, a first electrode, a second electrode, a first electrode lead and a second electrode lead, wherein, the light response layer is an Al2O3 mono-crystalline or Al2O3 film with the thickness of 1nm to 10mm; the first electrode and the second electrode are arranged on the light response layer with the thickness of 1nm to 10 mm; ends of the first electrode lead and the second electrode lead are respectively connected with the first electrode and the second electrode and the other ends thereof are connected with an amplification circuit or voltage testing equipment; furthermore, a resistor is fixedly connected between the two electrode leads in parallel. The infrared detector of the invention has simple structure and high response speed, and can obtain photovoltaic signals under the radiation of infrared, with the response speed of ns level.

Description

technical field [0001] The invention relates to a photodetector, in particular to a fast-response infrared photodetector made of aluminum oxide single crystal material or thin film. Background technique [0002] The detection of laser energy, power, pulse width and waveform is not only very important for laser devices and basic research, but also has a very wide range of uses in military, national defense, agriculture, resource mining, transportation, etc. At present, various types of laser detectors such as pyroelectric, photoelectric, and pyroelectric have been developed in the prior art, among which pyroelectric detectors are most commonly used. However, although pyroelectric detectors have a wide response range, their response time is relatively slow. It is millisecond level, so people are still exploring fast-response, high-sensitivity new laser detectors. [0003] Sapphire single crystal (Sapphire, also known as white gem, the molecular formula is Al 2 o 3 ) has goo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J1/42G01J11/00
Inventor 周娜赵嵩卿刘昊赵卉高磊王爱军赵昆
Owner CHINA UNIV OF PETROLEUM (BEIJING)
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