Process and equipment for etching and drying silicon solar cell

A technology of silicon solar cells and drying process, applied in the direction of circuits, electrical components, cleaning methods and utensils, etc., can solve the problems of high energy consumption, danger, high consumption of chemical reagents and water sources, etc.

Inactive Publication Date: 2008-10-01
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the surface treatment of silicon solar cells, the traditional RCA method is mainly used to clean silicon wafers. This process needs to consume a lot of chemical reagents and water sources to complete the cleaning of silicon wafers. Most of the chemical reagents are harmful to the operator and the environment. Bring considerable pollution and danger
The current cleaning is a very complicated process. The cleaning process adopts stirring, N 2 The method of bubbling, high energy consumption, high pollution, and the processing texture is prone to inconsistent roughness
Etching and cleaning need to consume a lot of strong acid and alkali, a large amount of water, complicated process and expensive equipment

Method used

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  • Process and equipment for etching and drying silicon solar cell

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Embodiment Construction

[0017] Cleaning, etching and drying process of silicon solar cells, using megasonic energy to generate O 3 , as an etching solution to clean the silicon wafer, and add HF to remove metal ions and SiO 2 layer, the specific steps are:

[0018] ① Megasonic tank cleaning to remove the damaged layer: use megasonic to generate O in deionized water 3 , O 3 The solubility is above 10ppm, and HF is added in deionized water, the HF concentration is 2-5%, and the cleaning is carried out at room temperature, and the ideal temperature is controlled at 23°C; To the effect of uniform cleaning;

[0019] ② Put the silicon wafer into deionized water for ultrasonic cleaning, in which the megasonic frequency is above 1MHZ, and the power is adjustable from 50 to 600W; it can remove the influence of F ions, achieve a uniform cleaning effect, and make the cleaning more thorough;

[0020] ③ After the above cleaning, dry the silicon wafer when it is lifted out of the liquid surface. A set of N 2 ...

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Abstract

The invention provides a cleaning, etching, drying process and device of silicon solar energy cell. The process is: firstly cleaning with ultrasonic groove; generating O<3> in deionized water by ultrasonic and adding NaOH in the deionized water; then putting the silicon chip to the process ultrasonic cleaning in the deionized water; after the cleaning, drying when the silicon chip is lifted above the liquid level; a N<2> nozzle is mounted on an upper side of the drying groove. The silicon chip directly contacts the N<2> in high concentration after the silicon chip is lifted above the liquid level; drying with N<2> containing saturated IPA, then loading. A cleaning basket where the silicon chip is placed is transmitted by a delivery mechanism in sequence to the ultrasonic cleaning groove, the deionized water ultrasonic cleaning groove, then to a drying loading system under N<2>(IPA) atmosphere. The whole cleaning, drying process use extremely little chemical agents, which greatly reduces environment pollution, saves water resource with very simple process.

Description

technical field [0001] The invention relates to a method for cleaning, etching and drying silicon solar cells and an integrated processing machine. Background technique [0002] Solar photovoltaic cell is an important part of new technology and renewable environment-friendly energy, and it is the most promising energy technology in the world today. Silicon solar cells are the core part of photovoltaic cells. High-efficiency silicon solar cells require a series of technologies to complete the silicon surface treatment. At present, in the surface treatment of silicon solar cells, the traditional RCA method is mainly used to clean silicon wafers. This process needs to consume a lot of chemical reagents and water sources to complete the cleaning of silicon wafers. Most of the chemical reagents are harmful to the operator and the environment. Bring considerable pollution and danger. The current cleaning is a very complicated process. The cleaning process adopts stirring, N 2 T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18B08B3/12
CPCY02P70/50
Inventor 曾春红王敏锐张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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