Composite hard mask layer, metal-oxide-semiconductor transistor and manufacturing method thereof

Abstract

The invention discloses a method for preparing metal oxide semiconductor transistor by utilizing composite hard mask layer, which includes steps: providing a substrate which surface contains a dielectric layer and a multi-crystal silicon layer; forming a composite hard mask containing a middle hard mask and a side wall hard mask which covers side wall of the middle hard mask on the multi-crystal silicon layer; carrying a first etching technique: etching the multi-crystal silicon layer and the dielectric layer by using the composite hard mask as etching mask, and forming a grid structure; carrying a second etching technique: forming grooves respectively on substrate at two sides of the grid structure; carrying selectivity epitaxial growth technique: forming epitaxial layers respectively inthe grooves. The invention also discloses a composite hard mask layer and a metal oxide semiconductor transistor.

Description

technical field

[0001] The present invention relates to a method for manufacturing a metal-oxide semiconductor transistor (MOS transistor) using a composite hard mask layer, especially a method for growing a metal-oxide semiconductor transistor (MOS transistor) using selective epitaxial growth (hereinafter referred to as SEG). Methods of fabricating MOS transistors. Background technique

[0002] Selective epitaxial growth (SEG) technology is mainly to form an epitaxial layer with the same lattice arrangement as the substrate on the surface of a single crystal substrate, which is used in the manufacture of many semiconductor devices, such as raised source / drain (raised source / drain) ) transistors have the advantages of good short channel characteristics and low parasitic resistance, and at the same time, through the existence of an increased epitaxial layer, it can avoid the trouble of excessive consumption of silicon substrate when forming metal silicide; while the embedded ...

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