Ultra high vacuum magnetron sputtering rectangular plane sputtering target

Abstract

The invention discloses an ultrahigh vacuum magnetron sputtering rectangular plane sputtering target, which comprises a cooling pipe (6) which runs through a mounting flange (1) and is connected with water-cooling cavity parts (5) in a target shielding cover (3). Especially, (a): the cooling pipe (6) is connected with the mounting flange (1) by a sealing part (2) of the cooling pipe; (b), the water-cooling cavity parts (5) are an upper flange (511) and a lower flange (512) of the water-cooling cavity which are connected with a screw (53) by a sealing ring (52); the lower flange (512) of the water-cooling cavity is internally provided with a soft iron (58) and a permanent magnet (54); the cooling pipe (6) is communicated with the water-cooling cavity parts by welding after running through the bottom of the water-cooling cavity parts; a nut (57) is against and connected with an insulating sleeve gasket (56) sheathed on the outside of the cooling pipe by the external thread of the cooling pipe (6) in a pressing way; (c), the rectangular plane sputtering target further comprises at least one supporting screw (10) and a sealing part (7) of the supporting screw which is connected with the supporting screw in a matching way. The vacuum degree of the ultrahigh vacuum magnetron sputtering rectangular plane sputtering target reaches up to more than 6*10<-6>Pa, which can be used for high-quality coating of work pieces with large surface area.

Description

technical field [0001] The invention relates to a magnetron sputtering target, in particular to an ultra-high vacuum magnetron sputtering rectangular plane sputtering target. Background technique [0002] Magnetron sputtering technology uses the combined action of electric field and magnetic field to make electrons spiral in the narrow space surrounded by the magnetic field lines and the target surface, which improves the collision probability between electrons and sputtering gas atoms, so it has a high sputtering rate. , low voltage, high efficiency and low substrate temperature. Since its inception, the film preparation process has undergone tremendous changes due to its two characteristics of high speed and low substrate temperature rise. At present, magnetron sputtering coating has become one of the most important technologies in industrial coating production. With the continuous expansion of its application field, the surface area of ​​the workpiece to be coated is als...

AI Technical Summary

Problems solved by technology

However, there are deficiencies in this sputtering target. First of all, after the magnet seal cover is filled with pure iron, magnets and cooling system, if it is welded and packaged, it will be difficult to carry out necessary maintenance and maintenance of each component in it in the future. Replacement, if it is a cover-type package, air leakage and water seepage will easily occur at the package; secondly, as the cathode, it needs to be electrically insulated from other parts in the sputtering equipment, and the insulating layer is made of non-metallic materials. Just can't use the way of welding to solve mutual sealing problem; Again, because of the defect on structure, the vacuum degree of sputtering equipment can only reach 10-5Pa at the highest, because the vacuum degree of equipment is not high, metal sputtering During the radiation process, due to the existence of more water vapor molecules and oxygen molecules in the environment, the color of the metal layer will be abnormal, and there will be dark and turbid areas, poor reflectivity and poor solderability, which will seriously affect the semiconductor devices and circuits. The performance and yield, as well as the appearance and internal quality of the coating workpiece; finally, in order to achieve the purpose of coating a large area of ​​the workpiece, the area of ​​the sputtering target needs to be increased, and the length of the target is usually more than one meter. This will inevitably increase the weight of the target, which will cause the problem of safe fixing of the sputtering target.

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