Process for preparing P-shaped zinc oxide semiconductor bulk material
A bulk material, zinc oxide technology, applied in the direction of semiconductor devices, chemical instruments and methods, polycrystalline material growth, etc., can solve the problems of not preparing P-ZnO polycrystalline semiconductor bulk material methods and products, etc., to achieve good crystallization quality, Produce reproducible results
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Embodiment 1
[0015] Under fixed pressure and temperature conditions, p-type ZnO bulk materials were prepared by adding different contents of Sb (mol%) to ZnO.
[0016] The mixed powders of ZnO and Sb with different mole percentage components were used as synthetic raw materials, and were sintered for 20 minutes at a pressure of 5.4GPa and a temperature of 1600°C.
[0017] X-ray diffraction measurements were performed on the p-ZnO:Sb bulk materials prepared above with different molar ratios, and the results showed that all the samples had a single hexagonal structure, and the peak half maximum width of the main diffraction peak (002) was narrow (below 0.2) , indicating that its crystal quality is relatively high. The results of EDX and X-ray diffraction measurements show that the Zn and Sb in the sintered samples are basically consistent with the initial ratio. According to the observation of the Hall effect, as shown in Table 1 (5.4GPa, the electrical properties of P-ZnO:Sb prepared with ...
Embodiment 2
[0021] Under the condition of fixed pressure and raw material ratio, the quality of semiconductor P-type ZnO body material is improved by changing the sintering temperature.
[0022] Using a homogeneous mixture of 95% ZnO and 0.5% Sb by mole percentage as the raw material, sintering at different temperatures for 20 minutes under the pressure of 5.4GPa.
[0023] The ZnO-doped Sb bulk material prepared under different temperatures shows by Hall effect measurement, as shown in Table 2 (ZnO: Sb is 0.95: 0.5 (mol), the pressure is 5.4GPa, P-ZnO: Sb under different temperature conditions Electrical properties), the bulk material obtained below 1100°C is N-type, 1100-1300°C is weakly P-type, and above 1300°C is p-type. The bulk material obtained in the range of 1400-1600°C has a carrier concentration of 1×10 18-21 cm-3, resistivity 23~0.006Ω.cm, mobility 0.08~1.16cm2.V-1.S-1, indicating that the quality of P-type ZnO body material can be improved by changing the sintering temperatur...
Embodiment 3
[0028] Under the condition of fixed temperature and raw material ratio, the quality of P-type ZnO body material is improved by changing the sintering pressure.
[0029] A homogeneous mixture of 95% ZnO and 0.5% Sb by mole percentage is used as the raw material, the sintering temperature is 1600° C., and the sintering is carried out under different pressures for 20 minutes.
[0030] Different quality p-ZnO:Sb bulk materials were prepared by different sintering pressures. The results of the Hall effect measurement show that, as shown in Table 3 (ZnO:Sb is 0.95:0.5 (mol), the temperature is 1600°C, the electrical properties of P-ZnO:Sb under different pressure conditions), as the sintering pressure increases, , the quality of the p-ZnO:Sb bulk material sample prepared is improved, and the electrical parameters are also improved. It shows that the quality of p-ZnO:Sb bulk material can be improved by changing the sintering pressure.
[0031] Table three
[0032] sample ...
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