Silicon carbide nanometer line accompanied with string structure and preparation method thereof

A silicon carbide nanowire, silicon carbide technology, applied in chemical instruments and methods, single crystal growth, polycrystalline material growth and other directions, can solve the problems of difficult to control product structure and morphology, complex preparation process, high cost, and achieve the goal of preparation The effect of short cycle, simple preparation process and low cost

Inactive Publication Date: 2008-12-10
HARBIN INST OF TECH
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems that the existing preparation process of silicon carbide nanowires with a string structure is relatively complicated, the cost is high,

Method used

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  • Silicon carbide nanometer line accompanied with string structure and preparation method thereof
  • Silicon carbide nanometer line accompanied with string structure and preparation method thereof
  • Silicon carbide nanometer line accompanied with string structure and preparation method thereof

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specific Embodiment approach 1

[0008] Specific Embodiment 1: The silicon carbide nanowires with a string structure in this embodiment have a single crystal structure of cubic silicon carbide, the diameter of the central rod is 50-100 nanometers, and the outer ring of the central rod has a string structure. Silicon carbide, the diameter of silicon carbide with a string structure is 100-500 nanometers, and the longest silicon carbide nanowire with a string structure can reach 4 mm, see figure 1 , figure 2 , image 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 .

specific Embodiment approach 2

[0009] Specific embodiment two: The silicon carbide nanowires with a string structure in this embodiment are prepared through the following steps: 1. Prepare a mixed sol of silica sol and sucrose according to the molar ratio of silicon to carbon of 1:2-5, 2. Use a magnetic stirrer to stir for 2 to 4 hours at a room temperature of 15-30°C to prepare a uniform sol; 3. Put the beaker containing the sol into a water bath heater and control the temperature at 90-100°C Carry out gel treatment for 5±0.1 hours to obtain a white or slightly light yellow transparent gel; 4. Put the gel obtained in step 3 into a crucible and place it in a tubular heating furnace at a rate of 950-1100ml / min The flow rate of nitrogen gas is passed into the tube heating furnace, and the tube heating furnace is heated to 750 ~ 850 ° C at a heating rate of 8 ~ 12 ° C / min, and the temperature is maintained for 1 hour, and then naturally cooled to room temperature under the protection of nitrogen gas, to obtai...

specific Embodiment approach 3

[0011] Embodiment 3: The difference between this embodiment and Embodiment 2 is that in step 1, a mixed sol of silica sol and sucrose is prepared according to the molar ratio of silicon to carbon of 1:3. Other steps are the same as in the second embodiment.

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Abstract

The invention provides a silicon carbide nanowire with a string-shaped structure and a preparation method thereof, and relates to a quasi-one dimensional nanostructure and a preparation method thereof. The silicon carbide nanowire with the string-shaped structure is a single crystal of cubic silicon carbide. The method comprises the following steps of: putting amorphous carbon/silicon dioxide nano composite powder into a crucible and place the crucible in an atmosphere sintering furnace; passing through argon into the furnace after the furnace is vacuumized to ensure that initial air pressure reaches between 0.1 and 2.0MPa; then, heating the furnace up to a temperature of between 1500 and 1800 DEG C at a rising speed of between 5 and 30 DEG C/minute for 0.5 to 6 hours; and cooling the powder to room temperature in the furnace to obtain the silicon carbide nanowire with the string-shaped structure. A diameter of a central line or a central rod is distributed in a range of between 50 and 100 nanometers, and a diameter of the silicon carbide nanowire with the string-shaped structure on the central line or the central rod is distributed in a range of between 100 and 500 nanometers. The silicon carbide nanowire with the string-shaped structure and the preparation method have the advantages of simple preparation process, low cost and short preparation period, and can realize control to the structure and the appearance of a product.

Description

technical field [0001] The invention relates to a quasi-one-dimensional nanostructure and a preparation method thereof. Background technique [0002] Since the discovery of carbon nanotubes by a Japanese scholar (Lijima) in 1991, one-dimensional nanomaterials have attracted much attention. One-dimensional nanomaterials or quasi-one-dimensional nanomaterials can be divided into nanowires, nanotubes, nanobelts, nanorods, etc. according to their morphology, and can be divided into metals, semiconductors, and polymers according to their materials. Among many one-dimensional or quasi-one-dimensional nanomaterials, silicon carbide (SiC) has attracted more and more attention due to its excellent mechanical properties, semiconductor properties, physical and chemical stability, and high temperature stability. [0003] Silicon carbide (SiC) nanowires with a string structure is a novel quasi-one-dimensional nanomaterial, which has great potential in the fields of chemical catalysis, m...

Claims

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Application Information

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IPC IPC(8): C30B29/36C30B29/62C01B31/36
Inventor 温广武张晓东黄小萧钟博白宏伟张涛
Owner HARBIN INST OF TECH
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