Lateral diffusion metal-oxide-semiconductor element with low opening resistor and manufacturing method thereof

Abstract

The invention a transverse diffusion metal-oxide-semiconductor element of a low turn-on resistance, comprising a first well region with a first conduction type, a second well region with a second conduction type, a drain electrode region with the first conduction type, a source electrode region with the first conduction type, a field oxide, a grid dielectric layer, a grid conducting layer and a doping region with the first conduction type. The first well region and the second well region are adjacent and located in a substrate. The drain electrode region is located in the first well region. The source electrode region is located in the second well region. The field oxide is located on the first well region between the source electrode region and the drain electrode region. The grid conducting layer is located on the second well region between the source electrode region and the drain electrode region, and covers partial filed oxide. The grid dielectric layer is located between the grid conducting layer and the substrate. The doping region is located in the first well region below partial grid conducting layer and the field oxide, and is connected with the drain electrode region, wherein the second well region between the doping region below the grid dielectric layer and the source electrode region defines a channel region.

Description

technical field [0001] The present invention relates to an integrated circuit and its manufacturing method, and in particular to a low turn-on resistance lateral diffusion metal oxide semiconductor element and its manufacturing method. Background technique [0002] A laterally diffused metal oxide semiconductor (LDMOS) device is a typical high-voltage device that can be integrated with a complementary MOS process to fabricate control, logic, and power switches on a single chip. The LDMOS device must have a high breakdown voltage (breakdown voltage) and a low on-state resistance (Ron) during operation. LDMOS devices with high breakdown voltage and low on-resistance have lower power loss in high-voltage applications. In addition, the lower on-resistance enables the transistor to have a higher drain current in saturation to increase the operating speed of the device. [0003] The high electric field and high drain current at the drain end of the laterally diffused metal oxide...

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Problems solved by technology

However, the formation of the field oxide layer will lead to an increase in the turn-on resistance, resulting in a decrease in the saturation current

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