Growth method of CdTe nanorod by catalyst assistant vacuum heat evaporation

A technology of catalysts and nanorods, which is applied in the field of catalyst-assisted vacuum thermal evaporation to grow CdTe thin films with nanorods in microscopic appearance, can solve the problems that it is difficult to obtain large-area uniform nanostructures and no reports have been seen, and achieve Uniform shape, simple operation, large deposition area

Inactive Publication Date: 2008-12-24
XINJIANG UNIVERSITY
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Problems solved by technology

[0004] It can be seen that the typical material for preparing nanostructures by thermal evaporation gas phase method is metal oxide, and chemical vapor deposition method needs to introduce reaction gas and carrier gas, and it is difficult to Obtain large-area uniform nanostructures on various substrates
Moreover, the preparation of large-scale deposition of CdTe nanorods on ITO glass, quartz glass, and silicon wafers has not been reported.

Method used

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  • Growth method of CdTe nanorod by catalyst assistant vacuum heat evaporation
  • Growth method of CdTe nanorod by catalyst assistant vacuum heat evaporation
  • Growth method of CdTe nanorod by catalyst assistant vacuum heat evaporation

Examples

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Effect test

Embodiment 1

[0017] High-purity CdTe powder (99.5%) is used as raw material, high-purity metal bismuth powder is used as catalyst, the two are mixed according to the ratio of 1mol:0.25mol, put into a ceramic boat and placed on a nickel heater, and ITO glass is used as a base The sheet was placed approximately 4 mm from the evaporation source. When the vacuum reaches 2×10 -3 At this time, the current was gradually increased to 70A at a current increase rate of 2A / min, and then deposited for 15min. The XRD analysis results show that the main phase of the product is cubic CdTe, and the catalyst is hexagonal Bi, such as figure 1 . The surface morphology of the film observed by SEM is nanowires with a length of 30-50 μm and a diameter of 100-300 nm, such as figure 2 .

Embodiment 2

[0019] High-purity CdTe powder (99.5%) is used as raw material, high-purity metal bismuth powder is used as catalyst, the two are mixed according to the ratio of 1mol:0.125mol, put into a ceramic boat and placed on a nickel heater, and ITO glass is used as a base The sheet was placed approximately 4 mm from the evaporation source. When the vacuum reaches 2×10 -3 At the same time, the current was gradually increased to 50A at a current increase rate of 2A / min, and then gradually increased to 60A at a current increase rate of 1A / min, and deposited for 15min. The surface morphology of the film observed by SEM is a nanorod with a branched structure with a trunk diameter of about 500 nm and a branch diameter of about 50 nm, such as image 3 .

Embodiment 3

[0021] High-purity CdTe powder (99.5%) is used as raw material, high-purity metal bismuth powder is used as catalyst, the two are mixed according to the ratio of 1mol:0.125mol, put into a ceramic boat and placed on a nickel heater, and quartz glass is used as a base The sheet was placed approximately 4 mm from the evaporation source. When the vacuum reaches 2×10 -4 At the same time, the current was gradually increased to 50A at a current increase rate of 2A / min, and then gradually increased to 60A at a current increase rate of 1A / min, and deposited for 15min. The surface morphology of the film observed by SEM is a flower-like cluster, and nanorods with a diameter of about 100 nm grow on the surface, such as Figure 4 .

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Abstract

The invention discloses a method for preparing a CdTe nano structure of a II-VI series semiconductor compound through catalyst assistance and vacuum thermal evaporation. The method comprises the following steps that: by adoption of metallic Bi powder as a catalyst and CdTe powder as a raw material, the raw material undergoes thermal evaporation under the vacuum environment with a vacuum degree of 2x10<-2>-2x10<-3>Pa, and a CdTe film with the nano structure is grown on a substrate through catalysis. The method is simple and easy to operate, does not require carrier gas, and has the characteristics of large deposition area, uniform appearance, and suitability for various substrates.

Description

technical field [0001] The invention belongs to the field of nanostructure growth, and in particular relates to a method for growing a CdTe film whose microscopic appearance is nanorods by a catalyst-assisted vacuum thermal evaporation method. Background technique [0002] CdTe has a high absorption coefficient in the solar spectrum band and can effectively convert solar energy into electrical energy. It is an excellent photovoltaic energy material. Polycrystalline thin-film photovoltaic cells with CdTe thin films as absorber materials have broad application prospects. In recent years, the development of nanomaterials shows that nanoscale materials are likely to have more excellent properties, and devices with better performance can be prepared. Among nanomaterials, one-dimensional nanomaterials, including nanorods and nanowires, have important technical application prospects, and are one of the current research hotspots in material science and technology. Among the many e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/48C30B29/62C30B23/00
Inventor 简基康尚飞孙言飞吴荣郑毓峰
Owner XINJIANG UNIVERSITY
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