Three-dimensional interactive display method for image-forming of photo-etching machine resists

A technology of three-dimensional interaction and display method, applied in the field of virtual reality, can solve the problems of incapable of dynamic interactive display of resist pattern, no simulation of light intensity information, etc., to solve the problem of three-dimensional visualization, improve real-time and interactive, analysis intuitive effect

Inactive Publication Date: 2008-12-24
SHANGHAI UNIV
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Problems solved by technology

[0008] The purpose of the present invention is to provide a three-dimensional interactive display method for resist imaging simulation of a lithography machine, which can solve the problem of three-dimensional visualization of resist imaging simu

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  • Three-dimensional interactive display method for image-forming of photo-etching machine resists
  • Three-dimensional interactive display method for image-forming of photo-etching machine resists
  • Three-dimensional interactive display method for image-forming of photo-etching machine resists

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Embodiment Construction

[0030] A preferred embodiment of the present invention is described as follows in conjunction with accompanying drawing:

[0031] This embodiment provides a method for full three-dimensional real-time roaming and simulation of large-scale structural scenes that require high precision for integrated chips. The overall process includes performing illumination imaging simulation with lithography simulation algorithm, reordering the imaging simulation data, and transforming the imaging simulation results into 3D model point cloud data through the illumination intensity and depth conversion model. The point cloud data is processed by the triangular mesh mask method, and the 3D mesh is constructed point by point, and the continuous level of detail (CLOD) processing is performed based on the graphics processing unit (GPU), so as to realize the 3D real-time rendering of the simulation results. Realize three-dimensional real-time interactive virtual scene roaming of resist patterns, su...

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Abstract

The invention relates to a simulated three-dimension interactive displaying method for the imaging of an anticorrosive agent of a photoetching machine. In the method of the invention, firstly, the distribution of space image intensity is calculated according to a mask pattern, and the simulation data for the imaging of the anticorrosive agent is obtained; then the imaging simulation data is rearranged, imaging simulation results are turned into the point cloud data of a three-dimension (3D) model through an illumination intensity and depth transformation model, and detailed processing and rendering calculations for the topography of surface anticorrosive agent of silicon wafers are carried out based on a continuous level method of a pattern processor, thus realizing 3D real time drawing and real time interactive roaming of the simulation results. The method of the invention realizes the real time observability and interactivity of the photoetching simulation data in a 3D space in the design of an integrated circuit chip.

Description

technical field [0001] The invention provides a method for three-dimensional interactive display of resist imaging simulation data of a lithography machine, which belongs to the technical field of simulation process of microelectronic lithography technology and the technical field of virtual reality. Background technique [0002] Lithography is a key link in the manufacture of large-scale integrated circuits, and a key process in the manufacture of complementary metal oxide semiconductors (CMOS) and system-on-chip (SOC). As large-scale integrated circuits enter the nanometer era, lithography technology is becoming more and more Lithography simulation can help semiconductor technicians simulate the lithography process, shorten the development cycle and improve product quality. It is a necessary tool for layout design. [0003] Lithography process simulation basically includes spatial image intensity distribution, exposure, post-baking, and etching, among which the etching pr...

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Application Information

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IPC IPC(8): G06T17/40G06T15/70G06T15/00G06T19/00
Inventor 万旺根崔滨余小清
Owner SHANGHAI UNIV
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