Process for preparing copper-indium-selenium sputtering target

A sputtering target material, copper indium selenium technology, applied in metal material coating process, sputtering plating, ion implantation plating, etc., can solve the problems of preparing copper indium selenium thin film, etc., to achieve convenient and stable process, stable The effect of good performance and simple process

Inactive Publication Date: 2008-12-31
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the laboratory, the conversion efficiency of copper indium gallium selenide (CIGS) solar cells obtained by using multi-component co-evaporation method has reached 19.2%. Uniform CuInSe thin film
Therefore, there are unresolved technical defects in the application of the above two methods to the large-scale production of copper indium selenium thin films

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Adopt the Cu powder that purity is 99.95% and the Se powder of 99.99%, weigh according to mass ratio 1: 1, put into graphite crucible after mixing, be placed in airtight furnace, vacuumize (less than 10 -2 Pa) after that, the graphite crucible is heated to make it warm up to 350°C for reaction, and the reaction time is 30min to prepare Cu 2 Se powder; adopt the In powder that purity is 99.99% and the Se powder of 99.99%, weigh according to mass ratio 1: 3, after mixing, put into graphite crucible, place in airtight furnace, vacuumize (less than 10 -2 Pa) after heating the graphite crucible to make it warm up to 300 ℃ for reaction, the reaction time is 30min, and In 2 Se 3 powder; obtained Cu 2 Se powder and In 2 Se 3 After the powder is mixed according to the mass ratio of 1:2.25, according to the ratio of ball to material ratio of 1:10, after ball milling for 12 hours, it is evenly filled in the mold, and cold pressed for 1 minute under the pressure of 600MPa to fo...

Embodiment 2

[0022] Adopt the Cu powder that purity is 99.95% and the Se powder of 99.99%, weigh according to mass ratio 1.6: 1, put into graphite crucible after mixing, be placed in airtight furnace, vacuumize (less than 10 -2 Pa) after charging into commercially available high-purity N 2 , keep the pressure in the furnace at 1atm, heat the graphite crucible to 450°C for reaction, the reaction time is 2h, and Cu 2 Se powder; adopt the In powder that purity is 99.99% and the Se powder of 99.99%, put into graphite crucible after weighing and mixing according to mass ratio 1:1, place in airtight furnace, vacuumize (less than 10 -2 Pa) after charging into commercially available high-purity N 2 , keep the pressure in the furnace at 1atm, heat the graphite crucible to 400°C for reaction, the reaction time is 4h, and In 2 Se 3 powder; obtained Cu 2 Se powder and In 2 Se 3 After the powder is mixed according to the mass ratio of 1:2.25, according to the ratio of ball to material ratio of 1:...

Embodiment 3

[0025] Using commercially available Cu with a purity of 99.99% 2 Se and In 2 Se 3 The powder is mixed according to the mass ratio of 1:2.25, and ball milled for 2 hours according to the ratio of ball to material ratio of 1:4, and then evenly filled in the mold, and cold pressed for 3 minutes under the pressure of 400MPa to form; the green body obtained is placed in a vacuum In the sintering furnace, use N 2 Vacuum after washing (less than 10 -2 Pa), then filled with high-purity N 2 to 1atm, start heating at this time, and pass H 2 , at the same time release the gas at the end of the furnace to keep the air pressure in the sintering furnace at 1 atm, and the green body in the furnace is heated up to 850 °C at 10 °C / min and kept for 2 hours; after the heating is completed, the ventilation is stopped, and the furnace is kept in a closed environment with a pressure of 1 atm for natural cooling After reaching room temperature, take it out to obtain the prepared copper indium s...

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PUM

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Abstract

The invention belongs to the new energy technique field of photoelectric material, in particular to a process for preparing a copper indium selenide sputtering target. A Cu2Se powder and an In2Se3 powder prepared or purchased in the market are mixed in a planetary ball mill for ball milling and then cold-press molding so as to make a biscuit with mixed material of Cu2Se and In2Se3, the biscuit is positioned in a closed vacuum sintering furnace, and is sintered and cooled for de-molding in the H2 protective atmosphere, thereby obtaining the copper indium selenide target. The produced target has uniform copper indium selenide phase, and the relative density reaches over 95 percent. The process has the advantages of simple process, high efficiency, low cost and good stability, and conveniently and stably guarantees the preparation process of copper indium selenide absorption layer films.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and new energy sources, and in particular relates to a process for preparing copper indium selenium sputtering targets. Background technique [0002] The compound semiconductor copper indium selenide (CuInSe) with chalcopyrite structure 2 ) is a direct bandgap material, and thin-film solar cells using it as a light-absorbing layer are considered to be one of the most promising third-generation compound photovoltaic materials. It not only has low manufacturing cost, high photoelectric conversion efficiency, but also has strong radiation resistance. , stable performance and other outstanding advantages. The structure of a copper indium selenide thin film solar cell is generally: antireflection layer / metal grid electrode / transparent electrode layer / window layer / transition layer / light absorption layer copper indium selenide / metal back electrode / substrate. The copper indium selenide u...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06B22F3/16
Inventor 张弓庄大明元金石李春雷张宁宋军
Owner TSINGHUA UNIV
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