GaN based LED and its production method

Abstract

The invention discloses a GaN-based LED and a preparation method thereof; an organic metal gas phase deposition technique is used for growing a GaN semiconductor layer on a substrate; the GaN semiconductor layer comprises an N-typed GaN layer, a luminescent area and a P-typed GaN layer; a film-plating technique is used for steam-plating a layer of transparent conductive layer on the semiconductor layer; the steam-plating thickness d is ranging from 2000 to 4000; the transparent conductive layer is formed; an optical etching and etching technique is used for carrying out local etching so as to lead part of N-typed GaN layer to be exposed out; subsequently, an optical etching mask template of required photon-similar crystal graphics is designed; a mask is formed on the optical etching mask template by photoresist; and the transparent conductive layer is etched. On the basis of the prior art, the method of the invention further processes the transparent conductive layer, prepares the transparent conductive layer as a micro-structure with photon-similar crystal, greatly improves the light outlet efficiency of the LED and effectively improves the brightness of the LED.

Description

technical field [0001] The invention relates to a GaN-based high-brightness light-emitting diode and a manufacturing method thereof. The method can improve the brightness of the GaN-based light-emitting diode, and the method can also be applied to the production and manufacture of other light-emitting diodes. Background technique [0002] Light-emitting diodes (LEDs) have the advantages of small size, power saving, and environmental protection. They have been widely used in consumer markets such as display backlight modules, communications, computers, traffic signs, and toys. However, due to the problem of insufficient brightness, they have not been used yet. Widely used in the lighting market. In order to solve the problem of insufficient brightness of light-emitting diodes, people in the industry are constantly looking for ways to improve the brightness of light. [0003] At present, the existing mature structures of high-brightness light-emitting diodes are as follows: ...

AI Technical Summary

Problems solved by technology

[0008] Although the above methods can increase the brightness of the light-emitting diodes to varying degrees, the first method will directly increase the manufacturing cost of the chip, and it is difficult to realize

Although the second and third methods can be realized, their main disadvantage is that once the manufacturing process fails, the product will be directly scrapped, and its production is irreversible.

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