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Method for improving Bi-S binary system thermoelectric material performance

A technology of thermoelectric materials and binary systems, applied in the manufacture/processing of thermoelectric devices, metal processing equipment, etc., to achieve low sintering temperature, simple process, and improved thermoelectric performance

Inactive Publication Date: 2009-02-04
UNIV OF SCI & TECH BEIJING
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Problems solved by technology

However, the texturing research on Bi-S binary system bulk thermoelectric materials has not been reported yet.

Method used

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  • Method for improving Bi-S binary system thermoelectric material performance
  • Method for improving Bi-S binary system thermoelectric material performance
  • Method for improving Bi-S binary system thermoelectric material performance

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Embodiment Construction

[0020] First, the mechanical alloying method (MA) was used to prepare Bi-S binary compound precursor fine powder. The method is to put the high-purity Bi and S elemental powders into the planetary high-energy ball mill according to the atomic ratio of 2: x (where x = 0 to 3), and carry out mechanical alloying under the protection of inert gas, and dry grinding to synthesize compound, wet grinding, and finally drying to obtain a fine powder of Bi-S binary compound, and then sintering the powder into a block. The bulk material is mainly prepared through two-step spark plasma sintering: the first step is sintering to obtain a dense Bi-S binary compound block, the sintering temperature is 200-500°C, the holding time is 2-8min, and the pressure is 20-60MPa. The second step adopts discharge plasma technology to conduct hot forging treatment to obtain the texture, the temperature is 200-500°C, the holding time is 2-8min, and the pressure is 30-60MPa.

[0021] Table 1 has provided se...

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Abstract

The invention relates to a method for improving the thermoelectric material property of the Bi-S binary system, which belongs to the technical field of energy materials. The method is divided into chemical compound synthesis and shaping. After high-purity Bi and S are weighed and mixed by the chemical component, high-energy ball milling is carried out under the protection of inert gas and a certain rotating speed, and then wet milling is carried out after dry milling and chemical compound synthesis, so as to obtain Bi-S binary chemical compound micro powder. The shaping process obtains blocky materials through discharge plasma sintering, which is mainly completed through two steps: first, the discharge plasma is sintered to obtain high-density Bi-S binary chemical compound blocks with small grain size; second, hot forging is conducted through the discharge plasma sintering technology to obtain tissue. Because discharge plasma sintering has the advantages of short time, low relative sintering temperature, etc., even and fine microstructure with preferred orientation can be obtained by controlling the sintering process. The method improves the thermoelectric property by controlling the ratio of elements and chemical components as well as grain orientation, and has the advantages of convenient process, short synthesis and shaping time, etc.

Description

technical field [0001] The invention belongs to the technical field of energy materials, and in particular provides a preparation method for improving the thermoelectric performance of a Bi-S binary system, involving mechanical alloying (Mechanical Alloying, MA) and spark plasma sintering (SparkPlasma Sintering, SPS) processes. Background technique [0002] Group V-VI Binary Compound Bi 2 m 3 The (M=S, Se, Te) alloy system is currently the thermoelectric material with the best performance at room temperature, and it is also one of the earliest and most mature thermoelectric materials studied, with a large Seebeck coefficient and low thermal conductivity. An important performance index to measure thermoelectric materials is thermoelectric figure of merit. Power generation and cooling efficiency are directly proportional to thermoelectric figure of merit. For a certain material, the figure of merit of its thermoelectric performance is given by the following formula: ZT = α ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C29/00C22C1/04B22F3/10B21J5/00H01L35/34H10N10/01
Inventor 张波萍赵立东李敬锋刘玮书
Owner UNIV OF SCI & TECH BEIJING
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