Solid sheet type tantalum electrolyte capacitor and its manufacturing method

A technology for tantalum electrolytic capacitors and manufacturing methods, applied in the direction of solid electrolytic capacitors, electrolytic capacitors, capacitors, etc., to achieve the effect of expanding the scope of application

Active Publication Date: 2009-04-08
BEIJING 718 YOUYI ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] When the operating voltage of such circuits is high, especially for high-reliability military circuits, if the operating voltage reaches above 25V, chip tantalum capacitors wit

Method used

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  • Solid sheet type tantalum electrolyte capacitor and its manufacturing method
  • Solid sheet type tantalum electrolyte capacitor and its manufacturing method
  • Solid sheet type tantalum electrolyte capacitor and its manufacturing method

Examples

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Embodiment 1

[0036] The embodiment of the present invention provides a solid chip tantalum electrolytic capacitor, the rated withstand voltage of the capacitor can reach 63v, the structure of the capacitor is as follows figure 2 shown, including:

[0037]A tantalum particle capacitor base 3, a nickel-based tin-plated negative electrode lead-out piece 2 and a nickel-based tin-plated anode lead-out piece 7 are arranged in the epoxy resin package shell 1. The inside of the tantalum particle capacitor base 3 is an anode, and the surface is a cathode. A dielectric layer with a thickness of not less than 3500 microns ( figure 2 not shown in), the anode is provided with a tantalum wire lead-out wire 5, the cathode of the tantalum particle capacitor base 3 is electrically connected to the nickel-based tin-plated negative electrode lead-out sheet 2, and the tantalum wire lead-out wire 5 in the tantalum particle capacitor base 3 is welded on the nickel An electrical connection is formed on the ba...

Embodiment 2

[0053] This embodiment provides a method for manufacturing a solid chip tantalum electrolytic capacitor, specifically as follows:

[0054] Select flaked tantalum powder with a specific volume of 7000UuF.v / g and a breakdown voltage of 240V, press the powder into an anode block with a tantalum wire lead-out wire of a certain size and quality according to a pressing density of 6.5 g / CC, Then carry out vacuum sintering under the conditions of 1700°C temperature and vacuum degree of 5×0.0004Pa to ensure that the strength, density and specific volume of the anode reach the design value;

[0055] The anode block is welded on the stainless steel bar, at a temperature of 70°C, using a DC voltage of 252V (4×63V) and a current density of 35 mA / g, put the anode block into the electrolyte containing phosphate glycol (the concentration of phosphoric acid in the electrolyte is 0.3% by volume, and the concentration of ethylene glycol is 30% by volume) in the tank, and the dielectric layer is ...

Embodiment 3

[0060] This embodiment provides yet another method for manufacturing a solid chip tantalum electrolytic capacitor, specifically as follows:

[0061] Select flake tantalum powder with a specific volume of 9000UuF.v / g and a breakdown voltage of 240V as the raw material, and press the powder into a certain size and quality with tantalum wire leads according to the pressing density of 6.0-8.0 g / CC. Anode blanks. Then carry out vacuum sintering in the range of 1600-1800 degrees, and gradually reduce the vacuum degree four times when it is out of the furnace, each time to ensure that the vacuum degree is not reduced by more than 0.25Ma. After passivation, the tantalum green blocks will not be excessively oxygenated. Therefore, it is ensured that the times of folding of the tantalum wire on the compact after sintering are not less than 4 times. Ensure that the strength and density of the anode meet the requirements of the design value;

[0062] At 60 ~ 85 degrees, use 260V DC voltag...

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Abstract

The invention discloses a solid slice-typed Ta electrolytic capacitor and a preparation method thereof, belonging to the field of electronic devices and components; the method comprises the steps as follows: according to the pressing density of 6.0-8.0g/CC, the slice-typed Ta powder with the specific volume of 6,000-10,000 UuF.v/g and the breakdown voltage of 240V is pressed as compacts containing Ta wire eduction wires; the compacts are vacuum-sintered under the temperature of 1,600-1,800 DEG C and the vacuum degree of 5*0.0004 Pa; the sintered compacts are passivated when going out of the stove; under the temperature of 60-85 DEG C, the sintered compacts are put in an electrolyte forming channel containing glycol Phosphate; a medium layer with the thickness complying with the withstanding voltage of 63V rated voltage is formed on the surface of the compact by DC voltage; an MnO2 layer used as a cathode is formed on the surface of the compact with the medium layer formed by manganese nitrate solution in a repeated dipping method; furthermore, a cathode eduction layer is formed; the Ta wire eduction layer of the compact is attached to the shell metal frame lead with corresponding shell number and then encapsulated, thus gaining the Ta electrolytic capacitor with the withstanding voltage of 63V.

Description

technical field [0001] The invention relates to the field of electronic components, in particular to a solid chip tantalum electrolytic capacitor and a manufacturing method thereof. Background technique [0002] The cathode of the chip tantalum capacitor adopts the electronic conductivity type manganese dioxide as the product cathode, and the electrolytic capacitor produced by manganese dioxide has a very strong self-repairing ability, so since it came out in the 1960s, it is still a medium and high voltage The most suitable cathode material for solid tantalum capacitors. [0003] When manganese dioxide is used as the cathode to produce chip tantalum capacitors, the manganese dioxide cathode is manufactured by chemical decomposition. Since the product has undergone repeated high-temperature chemical decomposition for many times, the withstand voltage of the product will decrease at the end of production. Significantly decreased, the specific production process see figure 1...

Claims

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Application Information

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IPC IPC(8): H01G9/15H01G9/042H01G9/008H01G9/08
Inventor 祁怀荣
Owner BEIJING 718 YOUYI ELECTRONICS
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