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Crystallization equipment, crystallization method, and phase modulation element

A technology of crystallization and phase modulation, applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as growing crystals with large particle size, difficulties in thin films, and degradation of thin film materials

Inactive Publication Date: 2009-04-08
ADVANCED LCD TECH DEVMENT CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to grow crystals with large grain size in the lateral direction
It is also generally difficult to form thin films with continuously varying light absorption profiles
In particular, when crystallization is performed by irradiating a thin film to be crystallized with very high-intensity light, thermal or chemical changes caused by light absorption tend to adversely cause degradation of the thin film material of the thin film having the light absorption distribution

Method used

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  • Crystallization equipment, crystallization method, and phase modulation element
  • Crystallization equipment, crystallization method, and phase modulation element
  • Crystallization equipment, crystallization method, and phase modulation element

Examples

Experimental program
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Embodiment 1

[0206] image 3 It is a schematic diagram showing the structure of the phase modulation device according to Embodiment 1 of the present invention. The phase modulation device 1 is a phase modulation device used to prepare a semiconductor thin film comprising a 5-square micrometer crystal grain array. The phase modulation device 1 includes a plurality of unit regions 1a having the same pattern, and each of the unit regions 1a is two-dimensionally arranged with a predetermined period. exist image 3 , for simplicity of description, only two adjacent unit regions 1a having squares are shown. According to the conversion value in the image plane of the optical imaging system 4, one side of each unit area 1a is 5 micrometers. The size of the phase modulation device 1 will be explained in the following according to the converted values ​​in the image plane of the optical imaging system 4 .

[0207] The unit area 1a includes a reference plane (a blank portion in the figure) 1aa ha...

Embodiment 2

[0256] FIG. 16 is a diagram schematically showing the structure of a phase modulation apparatus according to Embodiment 2 of the present invention. Phase modulation device 1 is a phase modulation device used to prepare a semiconductor thin film including a crystal grain array of 5 square microns in the same manner as in Example 1, and has a structure similar to that of Example 1. However, in Example 2, the first region 1ab, the second region 1ac, and all the third regions 1ad have a phase of -90° with respect to the reference plane 1aa (+90° in Example 1). Example 2 differs from Example 1 in this respect. Embodiment 2 will be described below focusing on the differences from Embodiment 1. FIG.

[0257] In Embodiment 2, in the direction away from the optical imaging system 4 from the calculated focus position of the optical imaging system 4 ( figure 1 On the surface of the substrate 5 to be processed that is defocused by 5 microns (i.e., -5 microns below) and positioned, the i...

Embodiment 3

[0264] Figure 19 It is a diagram schematically showing the structure of a phase modulation device according to Embodiment 3 of the present invention. Phase modulation device 1 is a phase modulation device used to prepare a semiconductor thin film including an array of crystal grains of 5 square microns in the same manner as in Examples 1 and 2, and has a structure similar to that of Example 1. However, in Example 3, eight square third regions 1ae of 0.2 square microns are formed around the first region 1ab and the second region 1ac, and the first region 1ab, the second region 1ac and all the third regions 1ae are opposed to each other It has a phase of +100° on the reference plane 1aa (+90° in Example 1). Example 3 differs from Example 1 in this respect. Embodiment 3 will be described below focusing on the differences from Embodiment 1. FIG.

[0265] Although not shown, in Embodiment 3, the calculated focus position from the optical imaging system 4 is away from the direct...

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Abstract

A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.

Description

[0001] This application is a divisional application, the original application is a patent application submitted to the China Patent Office on April 28, 2005, the application number is 200510068519.4, and the name of the invention is "crystallization equipment, crystallization method and phase modulation device". Background technique [0002] The present invention relates to a crystallization apparatus, a crystallization method and a phase modulation device, in particular to a crystallization apparatus for irradiating a polycrystalline or amorphous semiconductor film with a laser light having a predetermined light intensity distribution to generate a crystallized semiconductor film. [0003] For example, thin film transistors (TFTs) of switching devices used to control the potential applied to the pixels of a liquid crystal display (LCD) have heretofore been formed in amorphous silicon layers or polysilicon layers. [0004] The electron or hole mobility of the polysilicon layer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268H01L21/20H01L21/786
Inventor 加藤智也松村正清谷口幸夫
Owner ADVANCED LCD TECH DEVMENT CENT
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