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Apparatus for growing lithium aluminate crystal by czochralski method

A technology of pulling method and lithium aluminate, which is applied in the field of lithium aluminate crystals and can solve problems such as crystal devitrification

Inactive Publication Date: 2009-04-29
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of volatilization of the most prominent melt components encountered in the process of growing lithium aluminate crystals by the pulling method (Czochralski method or Cz method), and to provide a method for growing lithium aluminate crystals by the pulling method The device prevents the devitrification and cracking of the crystal caused by the deviation of the composition of the lithium aluminate crystal from the stoichiometric ratio during the growth process, and realizes the growth of large-sized and high-quality lithium aluminate crystals

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  • Apparatus for growing lithium aluminate crystal by czochralski method
  • Apparatus for growing lithium aluminate crystal by czochralski method

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Embodiment Construction

[0017] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention should not be limited thereby.

[0018] see first figure 2 , figure 2 It is a structural schematic diagram of an embodiment of the device for growing lithium aluminate crystals by the pulling method in the present invention. It can be seen from the figure that the device for growing lithium aluminate crystals by the pulling method in the present invention includes a single crystal growth furnace by the pulling method, In the hearth that furnace wall 1 forms, tray support 12 is arranged, and on this tray support 12 is alumina tray 11, and quartz barrel 9 and iridium crucible 8 are set on this alumina tray 11, and described iridium crucible 8 is equipped with Cylindrical iridium afterheater 7, cylindrical zirconia heat preservation cover 6 is set outside the iridium afterheater 7, between the quartz barre...

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Abstract

The invention provides a device for growing lithium aluminate crystals by a pulling method, which comprises a pulling-method single crystal growth furnace. The device is characterized in that the sidewall of a heat preservation cover of the single crystal furnace is intact and is provided with no observation window, and on the furnace wall opposite to an observation window, an observation mirror is erected above the heat preservation cover through a bracket, so as to observe a melt interface in an iridium crucible through the reflection of the observation mirror. The device has the advantages that the device can guarantee the uniformity and symmetry of a temperature field in a cavity of the heat preservation cover, effectively inhibit component volatilization in a process of growing the lithium aluminate crystals by the pulling method, and realize the growth of large-size and high-quality lithium aluminate crystals.

Description

technical field [0001] The invention relates to lithium aluminate crystals, in particular to a device for growing lithium aluminate crystals by a pulling method. Background technique [0002] In recent years, lithium aluminate crystals have aroused great interest among researchers because non-polar GaN thin films and devices can be obtained by epitaxy on them. However, the process of growing lithium aluminate crystals by the traditional pulling method is often accompanied by serious volatilization of melt components, and the crystals deviate from the stoichiometric ratio seriously, causing devitrification and cracking of the crystals, affecting the quality of the crystals and making it difficult to grow. In addition, the thermal stress generated during the crystal growth and cooling process will cause the crystal to burst during the cooling process or the wafer will warp or even crack during the slicing process. See the traditional pulling furnace device figure 1 , in the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B15/00
Inventor 周圣明林辉王军滕浩
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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