Damaging degree detecting method for ion-implantation Tellurium-cadmium-mercury photovoltaic detector
A technology of ion implantation and detection method, which is used in non-contact testing, single semiconductor device testing, etc.
Inactive Publication Date: 2010-11-17
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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There is currently no good method for detecting the damage state in this area, but people need the information of the damage in optimizing the device manufacturing process. Our method is a method that can provide the information of the damage, and it is a kind of detection method. The photoelectric process that is exactly the same as the detector detection process is used to reflect the damage degree, so it is a direct detection method for the influence of damage on the photoelectric response. There is no other similar method at present.
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[0019] The specific implementation manners of the present invention will be further described in detail below with reference to the accompanying drawings.
[0020] In this example, the laser is focused on the small-sized pn junction area through the observation of the high-magnification objective lens 4 and the CCD camera 3 of the micro-Raman spectrometer, and the stepping stage controller 9 drives the Dewar 5 on the two-dimensional micro-moving platform 6 The sample moves so that the laser beam scans along the center line of the pn junction, and the current signal is drawn out through the two far-end p-region test electrodes, and the lock-in amplifier 7 reads out the weak current signal, and the self-programming will record the scanning step and the current Finally, the data is processed to obtain the damage degree of the ion implantation area.
[0021] Specific steps are as follows:
[0022] 1. The sample to be tested is a mercury cadmium telluride photovoltaic device array...
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The invention discloses a method for detecting the damage degree of an HgCdTe infrared detector ion-implanted region. Based on the principle that light current is caused by the damage of ion-implanted n region under intense laser irradiation, an anomalous current signals under intense laser irradiation are obtained by adopting phase sensitive detection technology (a lock-in amplifier plus a mechanical chopper), regular laser beam induced current signals under low laser intensity are eliminated and the rest is the light current caused by the damage of ion-implanted n region. The light current can be regarded as a standard of judging the damage of samples. The method has the advantage that the effects of damage on photoelectric response can be directly detected through a photoelectric process that is totally identical with a detection process.
Description
technical field [0001] The invention relates to a detection technology of an infrared detector, in particular to a method for detecting the damage degree of an ion-implanted mercury cadmium telluride-like infrared detector. Background technique [0002] Mercury cadmium telluride (HgCdTe) infrared detectors have important application value in military and aerospace fields, and have high requirements on device performance. In infrared detectors, the ion implantation method is widely used to form the n-region, and the damage caused by ion implantation has a certain distribution. It is generally believed that the electron concentration formed by ion implantation reaches a maximum at a certain depth, while the electron concentration in the surface layer is relatively small. , which will seriously affect the optoelectronic performance of the device, limiting its application. Therefore, it is particularly important to detect the degree of damage in ion-implanted HgCdTe-like photov...
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IPC IPC(8): G01R31/265
Inventor 陆卫殷菲张波甄红楼李天信陈平平李志锋李宁陈效双
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI