Slew-rate control apparatus and methods for a power transistor to reduce voltage transients during inductive flyback
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- FREESCALE SEMICON INC
- Publication Date
- 2012-09-26
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The present invention relates generally to semiconductor devices, and more particularly to power switches. Background technique
[0002] In a power switch, when a transistor driving an inductive load is turned off, the drain voltage of the transistor increases suddenly. Sudden changes in drain voltage usually cause conducted or radiated emissions on the output lines to the inductive load. Conducted and / or radiated emissions often cause interference in other electronic devices coupled to or in immediate proximity to the power switch, which can cause the overall system to perform less than expected.
[0003] Accordingly, there is a need to provide apparatus and methods that reduce the amount of conducted or radiated emissions from a power switch when the transistor is turned off. Additionally, it would be desirable to provide an apparatus and method for altering the transition time of the voltage in the power switch when the transistor is switched off....