10 results about "Radiated emission" patented technology

To provide a compact sensor that detects the movement of an object in a 360-degree plane around the sensor. [Solution] The system includes a sensor module 50 that emits radio waves in a specific direction and detects the movement of an object based on the reflected waves of the emitted radio waves, and an antenna 51 that radiates the emitted radio waves in a 360-degree direction on a plane centered on the sensor. The antenna includes a conical reflector 68 that splits the radio waves into two directions, a slit 69 that allows radio waves traveling in a specific direction to pass through, an opening 70 that radiates the radio waves split into two directions, and first fins 71 and second fins 72 that adjust the angle of the radio waves radiated from the opening. The shielding plates 66 provided above and below compress the vertical direction and increase the gain of the radio waves radiated in the horizontal direction.

Radiation-emitting semiconductor chip (1), comprising - a semiconductor body (2) having an active region (20) designed to generate radiation; - a first contact layer (3) comprising a first contact surface (31) for external electrical contacting of the semiconductor chip and a first contact finger structure (35) connected to the first contact surface; - a second contact layer (4) comprising a second contact surface (41) for external electrical contacting of the semiconductor chip and a second contact finger structure (45) connected to the second contact surface, wherein the first contact finger structure and the second contact finger structure overlap in places in a top view of the semiconductor chip; - a current distribution layer (51) which is electrically connected to the first contact layer; - a connecting layer (52) which is electrically connected to the first contact layer via the current distribution layer; - an insulating layer (6) containing a dielectric material, wherein the insulating layer is arranged locally between the connection layer and the current distribution layer; - the insulation layer has at least one opening (60) in which the connection layer and the current distribution layer adjoin each other; and - the diameter of the openings is between inclusive 2 µm and inclusive 6 µm.

The application discloses a shaft current and radiation emission integrated test method and system for an electric drive system, and belongs to the technical field of testing. Through real road working conditions, the method and system realize the synchronous collection of multiple physical quantities of the electric drive system, and combine a high-fidelity digital twin model to perform dynamic correction and simulation analysis, thereby solving the problems of misalignment of data, missing correlation between internal shaft current and external radiation field, and incapability of quantifying the contribution of the shaft current in the traditional test. Therefore, the specific influence of the shaft current in the total radiation emission of the electric drive system can be accurately identified, a quantitative basis is provided for the diagnosis and optimization of electromagnetic compatibility problems, and the efficiency and accuracy of the EMC test and rectification of the electric drive system of the new energy vehicle are improved.

A light detection and ranging (LiDAR) device includes a transmitter configured to radiate a transmission signal to a target, an optical element between the transmitter and the target, a receiver, and a circuit. The transmission signal includes a first transmission signal portion and a second transmission signal portion different from the first transmission signal portion. The optical element is configured to modulate the first transmission signal portion with a modulation frequency, and reflect the modulated first transmission signal portion. The receiver is configured to generate a first beat signal by mixing a first reception signal reflected from the target with the transmission signal, and generate a second beat signal by mixing a second reception signal reflected from the optical element with the transmission signal. The circuit is configured to generate a clock signal based on the second beat signal, and correct the first beat signal by using the clock signal.

The radiative emission semiconductor device (10) includes a first semiconductor layer (110) of a first conductivity type disposed above an active region (115) and a first contact element (130) disposed above a first main surface (111) of the first semiconductor layer (110). Electromagnetic radiation (15) generated in the active region (15) is emitted via the first main surface (111). The first contact element (130) extends along a first direction. The radiative emission semiconductor device (10) also includes a trench (132) adjacent to the first contact element (130) and extending in the first direction. The trench (132) is formed in the first main surface (111) of the first semiconductor layer (110).

The utility model discloses a high -speed SPI communication circuit based on digital isolator, including SPI host equipment, SPI slave equipment and digital isolator U1, digital isolator U1 is connected between SPI host equipment and SPI slave equipment, A1 end of digital isolator U1 is electrically connected with the SCK signal end of SPI host equipment through resistance R1 and inductance L1, the common terminal of resistance R1 with inductance L1 is grounded through capacitor C2 and the common terminal of resistance R1 and A1 end is grounded through capacitor C5. The utility model discloses a high -speed SPI communication circuit based on digital isolator, solves the problem, such as radiation emission overproof, signal integrity is poor, timing synchronization is difficult, and the anti -interference ability is insufficient in the prior art, realizes the reliable SPI communication of high isolation voltage, high data rate.

A radiation-emitting semiconductor chip (1) configured to emit electromagnetic radiation from a radiation-emitting surface (2) during operation, comprising: - a substrate (3) on which a first epitaxial semiconductor layer sequence (4) of a first conductivity type and a second epitaxial semiconductor layer sequence (5) of a second conductivity type different from the first conductivity type are arranged, - a first current expansion layer (7) arranged between the first semiconductor layer sequence (4) and the substrate (3), - a second current expansion layer (8) arranged between the first current expansion layer (7) and the substrate (3), - a dielectric layer (9) arranged region by region between the first current expansion layer (7) and the second current expansion layer (8), - a reflective layer (10) arranged between the second current expansion layer (8) and the substrate (3),- an electrically insulating layer (11) which is arranged in certain areas between the second current expansion layer (8) and the reflective layer (10), and- the reflective layer (10) and the second current expansion layer (8) are in electrically conductive contact, and- the reflective layer (10) and the second current expansion layer (8) are in direct contact in certain areas.

A radiation-emitting semiconductor chip (1) comprising a semiconductor body (2) with an active area (20) intended for generating radiation is specified, wherein - the semiconductor body (2) has a radiation exit surface (25) with a first output coupling structure (4); - a dielectric layer (3) is arranged on the radiation emission surface (25); and - the dielectric layer (3) has a second output coupling structure (5) with a plurality of structural elements (51). Furthermore, a method for manufacturing radiation-emitting semiconductor chips is described.

The invention relates to a radiation-emitting semiconductor component (1) having a support (12) and a radiation-emitting semiconductor layer sequence (2) which is provided on the support (12). The semiconductor layer sequence (2) has an active layer (7) for generating electromagnetic radiation, a radiation exit face (2a) facing away from the support (12), a lower face (2b) facing the support (12), and at least one flank (6) extending from the radiation exit face (2a) to the lower face (2b). The semiconductor layer sequence (2) widens from the lower face (2b) to the radiation exit face (2a), and the semiconductor layer sequence (2) is provided with at least one reflective surface (10), which reflects the electromagnetic radiation, on the flank (6) and on the lower face (2b). The radiation-emitting semiconductor component (1) is a micro-LED in particular. The invention further relates to a method for producing a radiation-emitting semiconductor component.