Manufacturing process of tri-dimension stacked resistance conversion memory
A resistance switching, three-dimensional technology, applied in the manufacture of resistance switching memory, the field of resistance switching memory, to achieve the effect of low cost
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0074] The present invention discloses a three-dimensional stacked resistance switching memory, please refer to Figure 1A-1B .
[0075] Figure 1A It is a schematic cross-sectional view of a three-dimensional stacked resistance switching memory disclosed by the present invention. The substrate shown in the figure may include a peripheral circuit (not shown in the figure), and a first metal word line is distributed above the substrate on which the peripheral circuit is manufactured. Above the word line WL1 is a heavily doped and lightly doped two-layer multilayer Crystalline semiconductor material (n-type semiconductor shown in the figure), the purpose of heavy doping of polycrystalline semiconductor is to avoid the formation of Schottky contact between the metal word line and the semiconductor, and the purpose of light doping is to form Schottky diode. The preferred polycrystalline semiconductor material is polycrystalline silicon, and other polycrystalline semiconductors ...
Embodiment 2
[0080] This embodiment discloses a manufacturing method of a three-dimensional stacked resistance switching memory, please refer to Figure 3A-Figure 3P . The method comprises the steps of:
[0081] A1. Deposit the first type of metal material on the substrate 1 with the peripheral circuit, and use photolithography to manufacture the metal word line 2. The cross-sectional view of the obtained structure is as follows Figure 3A As shown, the projection along the B-B direction in the figure is as follows Figure 3B shown.
[0082] A2. Through thin film deposition and photolithography process on the word line 2, the heavily doped polycrystalline semiconductor 3, the lightly doped polycrystalline semiconductor 4 units and the second type metal 5 are manufactured. In this embodiment, the polycrystalline semiconductor is deposited The method is a vapor deposition method, and a dopant source is introduced during the deposition process. After photolithography, several Schottky diod...
Embodiment 3
[0093] see Figure 4A-Figure 4N , this embodiment introduces another method for manufacturing a resistance switching memory with a three-dimensional structure. This method has a simpler process and specifically includes the following steps:
[0094] B1, on the semiconductor substrate 31, form such as by ion implantation Figure 4A In the structure shown, the heavily doped semiconductor layer 32 will serve as a conductive word line, and a doped layer 33 with a gradient change in doping concentration is formed during the film deposition process, and the doping concentration of the doped layer 33 close to the semiconductor layer 32 is much higher At the concentration far from the base, the doping concentration far away from the base is lightly doped.
[0095] B2, on the above-mentioned substrate, deposit metal layer 34 and resistance conversion material 35 in sequence, as Figure 4B shown.
[0096] B3. Using a photolithography process, a shallow trench 36 with a deep depth is ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More