Electric charge induction image forming method based on semiconductor layer

A technology of charge induction and imaging method, which is applied in the direction of TV, camera tube, electrical components, etc., can solve the problems of inconvenient anode replacement, difficult vacuum packaging, and poor imaging quality, so as to simplify electronic design, facilitate research, and reduce imaging link effect
CN101478645BInactive Publication Date: 2010-12-15XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XI'AN INST OF OPTICS & FINE MECHANICS - CHINESE ACAD OF SCI
Publication Date
2010-12-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention relates to a charge induction imaging method based on semiconductor layer, wherein the charge induction imaging method comprises the following steps: 1) changing the fluorescent screen of photoelectronic imaging device to the semiconductor layer with a substrate, setting a position sensitive anode at the outer side of vacuum at the back surface of substrate of semiconductor layer, and the range of square resistance of semiconductor layer is 100Momega / piece to 1000Momega / piece; 2) receiving the light signal of measured object by the photoelectronic conversion part of photoelectronic image device, transmitting photon into an electron optical system, entering a microchannel plate after focusing for multiplication, and forming an electron cloud; 3) bombarding the semiconductor layer after the microchannel plate with the electron cloud after electric field acceleration; 4) collecting the charges on the semiconductor layer through charge induction by the position sensitive anode at the back surface of substrate of semiconductor layer; and 5) realizing imaging detection through exteriorly connecting the position sensitive anode with an electron read-out circuit and a computer image output circuit. The charge induction imaging method of the invention settles the technical problems of inferior imaging quality, hard vacuum closing and inconvenient anode changing inprior art.
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Description

technical field

[0001] The invention relates to a photoelectric imaging detection method. Background technique

[0002] Since Thomson discovered and measured the mass-to-charge ratio of electrons in 1897, various electronic imaging devices have developed rapidly and been widely used. Such as oscilloscope tube, kinescope tube, phase change tube, image intensifier, etc., all use high-speed electron beams to bombard the fluorescent screen to emit light to achieve imaging. In order to realize image acquisition and storage, one is to couple the image output from the fluorescent screen to the photosensitive surface of the CCD by optical lens or optical fiber coupling, that is, ICCD (enhanced charge-coupled device); the other is to thin the back-illuminated CCD Made in a vacuum device, instead of the original fluorescent screen, under the rated operating voltage, the electrons from the photocathode directly bombard the CCD, that is, EBCCD (Electron Bombardment Charge Coupled Devic...

Claims

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