Unlock instant, AI-driven research and patent intelligence for your innovation.

Back electrode module of solar cell

A technology of solar cells and back electrodes, applied in the field of solar cells, can solve the problems of thick transparent conductive layer, limited effect of improving the efficiency of solar cells, etc., and achieve the effects of increasing scattering, shortening process time, and reducing costs

Inactive Publication Date: 2009-07-22
IND TECH RES INST
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this structure not only requires a very thick transparent conductive layer, but also has very limited effect on solar cell efficiency improvement.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Back electrode module of solar cell
  • Back electrode module of solar cell
  • Back electrode module of solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] Figure 1A and 1B Each is a schematic cross-sectional view of a back electrode module of a solar cell according to an embodiment of the present invention.

[0045] Please refer to Figure 1A The back electrode module 20 of the solar cell is disposed on the photoelectric conversion layer 10 , which includes a transparent conductive layer 12 , a metal layer 16 and a plurality of nano-scattering dots 14 a located in the transparent conductive layer 12 . The material of the transparent conductive layer 12 is, for example, a transparent conductive oxide such as indium tin oxide (indium tin oxide, ITO), fluorine doped tin oxide (fluorine doped tin oxide, FTO), aluminum doped zinc oxide (aluminum doped zinc oxide, AZO) ), gallium doped zinc oxide (gallium doped zinc oxide, GZO) or a combination thereof or a combination thereof. The material of the metal layer 16 is, for example, aluminum, silver, molybdenum or copper. The nano-scattering dots 14a may be nano-metal single par...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a back electrode module of a solar cell and a manufacture method thereof. The back electrode module comprises a transparent conducting layer, a plurality of nanometer scattering points and a metal layer. A plurality of nanometer scattering points are positioned in the transparent conducting layer and the metal layer is positioned on the transparent conducting layer.

Description

technical field [0001] The invention relates to a solar cell and in particular to a back electrode module of a thin-film solar cell. Background technique [0002] Solar energy is an energy source that is inexhaustible and non-polluting. It has always been the focus of attention when solving the problems of pollution and shortage of petrochemical energy. Among them, solar cells can directly convert solar energy into electrical energy, which is a very important research topic at present. [0003] The most basic structure of a typical solar cell can be divided into four main parts: substrate, P-N diode, anti-reflection layer, and two metal electrodes. Its working principle is mainly through the photovoltaic effect. Simply put, the substrate is the main body of the solar cell; the P-N diode is the source of the photovoltaic effect; the anti-reflection layer is to reduce the reflection of incident light to enhance the photocurrent; the metal electrode is the connection element ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/052H01L31/0224H01L31/18H01L31/054
CPCY02E10/50
Inventor 曹福君陈麒麟
Owner IND TECH RES INST
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More