Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Schottky type standard CMOS whole differential photoelectric integration receiver

A Schottky-type, optoelectronic integrated technology, applied in the direction of electromagnetic receivers, electrical components, electromagnetic wave transmission systems, etc., can solve problems such as lower bandwidth, lower sensitivity, inconsistent or balanced input loads, etc., to improve stability and speed and the effect of sensitivity

Active Publication Date: 2009-07-29
南通君泰机动车检测有限公司
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this structure is that it not only leads to the inconsistency or balance of the two input loads of the differential optical receiver, which reduces the bandwidth, but also makes one of the two differential branches of the differential optical receiver have no light-generated current signal input, Reduced sensitivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Schottky type standard CMOS whole differential photoelectric integration receiver
  • Schottky type standard CMOS whole differential photoelectric integration receiver
  • Schottky type standard CMOS whole differential photoelectric integration receiver

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The present invention is achieved by the following methods: figure 1 It is the schematic diagram of the circuit structure of the Schottky type standard CMOS fully differential optoelectronic integrated receiver of the present invention; figure 2 It is a top view of the structure of the Schottky type fully differential photodetector in the Schottky type standard CMOS fully differential optoelectronic integrated receiver of the present invention; image 3 It is a structural sectional view of the Schottky type fully differential photodetector in the Schottky type standard CMOS fully differential optoelectronic integrated receiver of the present invention; Figure 4 It is an equivalent circuit model of the Schottky type fully differential photodetector in the Schottky type standard CMOS fully differential optoelectronic integrated receiver of the present invention when it works normally. Elaborate in detail below in conjunction with accompanying drawing:

[0023] The com...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of an optical communication system and optical interconnection, and relates to a Schottky type standard CMOS total difference opto-electronic integrated receiver, a Schottky type total difference optical detector, a total difference transimpedance preamplifier, a total difference limiting amplifier and a difference-to-single-end output buffer stage, wherein, structures, shapes, sizes and areas of two Schottky type opto-electronic detectors of the Schottky type total difference optical detector are same and the positions thereof are symmetrical; the two Schottky type opto-electronic detectors are adjacent with the smallest clearance allowed by the manufacturing technique and form a light acceptance area which is approximately a square; and two light generated currents have equal amount but different directions. The optical receiver realizes total difference characteristics of the standard CMOS difference optical receiver, can realize single chip integration and can improve the optical receiving speed and sensitivity.

Description

technical field [0001] The invention belongs to the field of optical communication system and optical interconnection, and relates to a Schottky type full differential photoelectric integrated receiver fully compatible with standard CMOS technology with Schottky contact. Background technique [0002] In short-distance and very short-distance optical communication and high-speed optical communication occasions such as optical interconnection, the use of silicon-based standard CMOS technology to realize monolithic optoelectronic integrated receivers has become a hot topic for many scholars. But up to now, there have been no reports of silicon-based standard CMOS optoelectronic integrated receivers that meet the practical requirements. restricted. [0003] In addition, in high-speed circuits, it is generally necessary to adopt a fully differential structure to improve the stability of the circuit, overcome various common-mode noise interference, and increase sensitivity. Howe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H04B10/158H01L27/144H04B10/66
Inventor 毛陆虹余长亮肖新东
Owner 南通君泰机动车检测有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products