Method for on-line detection of film growth rate and stress

A technology for detecting thin films and growth rates, applied in the optical field, can solve the problems of too high requirements for daily debugging and maintenance of optical systems, inability to detect local stress and growth rates of thin films, etc., to improve quality and output, enhance scientificity and accuracy. properties, and achieve the effect of industrial scale production

Inactive Publication Date: 2009-08-26
XIDIAN UNIV
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Problems solved by technology

There are two shortcomings in this on-site film stress detection system: one is that the two laser beams must be strictly focused, which requires too high requirements for the design, installation, daily debugging and maintenance of the optical sys...

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  • Method for on-line detection of film growth rate and stress
  • Method for on-line detection of film growth rate and stress
  • Method for on-line detection of film growth rate and stress

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Embodiment Construction

[0020] The present invention will be described in further detail below with reference to the accompanying drawings.

[0021] refer to figure 1 , the optical sensor of the present invention is composed of a first laser 1 , a second laser 2 , a controllable chopper 3 , a beam splitting prism 4 and a binary beam splitter 5 . The chopper 3 is controlled by an external circuit, so that the two laser beams of different frequencies output by the first pumping diode laser 1 and the second pumping diode laser 2 alternately pass through the chopper, and finally only one beam of laser light is output into the splitter. Prism 4. The binary grating beam splitter 5 is composed of a two-dimensional Dammann grating and a Fresnel zone plate to generate a self-converging multi-beam array. The present invention adopts the structure of two-color light incident and controllable optical chopper, can obtain Figure 4 The reflectance variation curve of light at two different wavelengths for the sa...

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Abstract

The invention discloses a method for on-line detection of film growth rate and stress, which comprises the following steps: (1) putting a film sample in a light path of an optical sensor, and detecting light spot position distribution information and light intensity change information of each light spot of a reflected light beam array of the detected sample so as to obtain a reflectivity curve of the film growth; (2) performing parameter fitting on the reflectivity curve through MATLAB software so as to obtain the film growth rate and refractive index information; (3) irradiating the surface of the film sample by a two-dimensional convergent beam array, detecting reflected light beam array information in a reflection direction of the surface of the film sample by a CCD device, and measuring the space length d of an incident laser beam, the incident angle alpha, the relative distance L between the sample and an array sensor, the deflection displacement delta of a light beam at the L position, and the parameter of the film thickness hf; and (4) calculating the film stress sigma by a Stoney relation equation according to the measured film substrate curvature parameters. The method can be applied to film on-line measurements in the field of manufacturing semiconductor materials and devices.

Description

[0001] The present invention is a divisional application named: thin film detection optical sensor, application number: 200610041991.3. technical field [0002] The invention belongs to the field of optical technology and relates to film detection, in particular to an online film detection method. Background technique [0003] It is well known in the industry that because stress changes in the film manufacturing process may cause the internal connection failure and delamination of the film to degrade the product quality, it is of great significance to control the degree of deformation of the film during the manufacturing process. Modern semiconductor processing requires electronic and optoelectronic equipment to precisely control the deposition process of thin film materials. At present, most processing processes need to measure parameters such as gas flow rate, deposition chamber pressure, and growth environment temperature in order to control the deposition process of thin ...

Claims

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Application Information

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IPC IPC(8): H01L21/66
Inventor 林晓春
Owner XIDIAN UNIV
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