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Method for manufacturing transparent cured film using positive-working photosensitive resin layer for half exposure

A technology of photosensitive resin layer and manufacturing method, applied in the manufacture of semi-transmissive liquid crystal display elements, in the field of manufacturing transparent cured films, can solve the problem of limited mask adjustment, increased exposure, and difficulty in increasing the output of manufactured elements and other issues to achieve the effect of wide exposure margin and high sensitivity

Active Publication Date: 2012-04-18
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the adjustment amount of the mask is limited, and the exposure sensitivity of the planarizing film must be lowered in order to form the concave-convex pattern with high precision.
Therefore, in order to form a contact hole, it is necessary to increase the amount of exposure, and as a result, it is difficult to increase the yield of manufactured devices

Method used

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  • Method for manufacturing transparent cured film using positive-working photosensitive resin layer for half exposure
  • Method for manufacturing transparent cured film using positive-working photosensitive resin layer for half exposure
  • Method for manufacturing transparent cured film using positive-working photosensitive resin layer for half exposure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0218] Hereinafter, examples are given to illustrate the present invention in more detail, but the present invention is not limited by these examples.

[0219] [Abbreviations used in Examples]

[0220] The meanings of the abbreviations used in the following examples are as follows.

[0221] MAA: Methacrylic acid

[0222] MMA: methyl methacrylate

[0223] HEMA: 2-hydroxyethyl methacrylate

[0224] CHMI: N-cyclohexyl maleimide

[0225] AIBN: Azobisisobutyronitrile

[0226] PGMEA: Propylene glycol monomethyl ether acetate

[0227] PGME: Propylene glycol monomethyl ether

[0228] PAG1: CGI1397 (trade name) manufactured by チバ·スペシヤイ·ケミカルズ Co., Ltd. / compound name: 2-methyl-α-[5-[[(propanesulfonyl)oxy]imino]-(5H)-thiophene Phenylacetonitrile (compound of formula (7))

[0229] PVE1: Tris(4-(vinyloxy)butyl) trimellitate

[0230] PVE2: 1,4-cyclohexanedimethanol divinyl ether

[0231] NCO1: VESTAGON (registered trademark) B 1065 (trade name) manufactured by Dysa AG / compound name: ε-caprolactam block pol...

Synthetic example 1

[0239] Use 19.4g MAA, 35.3g CHMI, 25.5g HEMA, 19.8g MMA as the monomer components constituting the specific copolymer, and 5g AIBN as the radical polymerization initiator. By putting them in 212.5g solvent PGMEA at a temperature of 60°C The polymerization reaction was performed at ~100°C to obtain a component (A) (specific copolymer) solution (specific copolymer concentration: 32.0% by mass) having an Mn of 4100 and Mw of 7600. (P1)

Synthetic example 2

[0241] Use 15.5g MAA, 35.3g CHMI, 25.5g HEMA, 23.7g MMA as the monomer components constituting the specific copolymer, and 5g AIBN as the radical polymerization initiator. By putting them in 212.5g solvent PGMEA at a temperature of 60°C The polymerization reaction was performed at ~100°C to obtain a component (A) (specific copolymer) solution (specific copolymer concentration: 32.0% by mass) having an Mn of 4400 and Mw of 7000. (P2)

[0242]

[0243] According to the composition shown in Table 1 below, by mixing (B) component, (C) component, (D) component and (E) solvent, and (F) component in a solution of component (A) in a prescribed ratio, It stirred for 30 minutes at a temperature of 23°C, or stirred at 35°C for 3 to 3 days to prepare a uniform solution, thereby preparing the positive photosensitive resin composition solution of each example and each comparative example.

[0244] [Table 1]

[0245] (A) Ingredient

The solution

(g)

(B) Ingredient

(g)

(C) Ingredi...

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Abstract

The present invention provides a method for manufacturing a transparent cured film having a wide exposure margin while maintaining a high level of sensitivity, especially a method for manufacturing a transparent cured film, which can be applied to the manufacture of a TFT flattening film in a semitransmission liquid crystal display element, and is used particularly for simultaneously forming contact holes and reflection concavoconvexes by half exposure. A method for manufacturing a transparent cured film, characterized by comprising stacking two positive-working photosensitive resin layers different from each other in exposure sensitivity on a base material so that the lower-sensitivity positive-working photosensitive resin layer is located between the base material and the higher-sensitivity positive-working photosensitive resin layer, exposing the positive-working resin layers to light, heating the exposed positive-working resin layers, developing the assembly, and post-baking the assembly. A display element comprising a transparent cured film produced by the above method.

Description

Technical field [0001] The present invention relates to a method for producing a transparent cured film obtained using a positive photosensitive resin layer. [0002] Specifically, it relates to a method for manufacturing a transparent cured film by exposing two positive photosensitive resin layers with different exposure sensitivities formed on a substrate, and finally passing through a post-baking process. [0003] Among them, it can be used in a method of semi-exposing the photosensitive resin layer with the above structure to produce a reflective layer of any shape, a flat transmission layer and a contact hole with high precision, especially in the manufacture of a semi-transmissive liquid crystal display Application of components. Background technique [0004] In general, thin film transistor (TFT) type liquid crystal display elements have reflective, semi-transmissive, and transmissive structures, and they can be appropriately selected according to the device used. Among them...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/26G03F7/039G03F7/004H01L21/027
CPCG03F7/095G03F7/0043G03F7/039G03F7/26
Inventor 畑中真
Owner NISSAN CHEM IND LTD