Method of using boron diffusion source and process for producing semiconductor
A diffusion source and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as time-consuming, labor-intensive, cost-increasing, and difficulty in obtaining boron diffusion
Active Publication Date: 2012-05-23
DENKA CO LTD
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Problems solved by technology
At this time, as the diffusion proceeds, the boron oxide of the boron diffusion source is consumed, and it is gradually difficult to obtain uniform boron diffusion.
Therefore, reoxidation treatment of the boron diffusion source is performed at an appropriate time to generate boron oxide on the surface, but this reoxidation treatment is time-consuming and laborious and increases the cost (Patent Document 1)
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Embodiment 1～12 comparative example 1～6
[0037] Boron nitride powder (BN purity: 99% by mass or more, average particle size: 7 μm), alumina powder (Al 2 o 3 Purity: 99 mass % or more, average particle size: 0.2 μm), borosilicate glass powder (purity: 99 mass % or more, composition: SiO 2 Components are 90% by mass, B 2 o 3 Components: 10% by mass, average particle diameter: 2.1 μm) were blended in the proportions shown in Table 1 and mixed in a ball mill for 3 hours. The obtained mixed raw material was filled into a graphite mold with an inner diameter of 150 mm, and hot-pressed and sintered in a nitrogen atmosphere at 1500° C. and a pressure of 8 to 12 MPa for 4 hours.
[0038] In addition, using a rubber mold, the above-mentioned mixed raw materials were subjected to CIP molding under the pressure shown in Table 1 (molded body size: about 150mm in outer diameter, about 60mm in height), and then sintered at 1700°C under normal pressure for 4 hours in a nitrogen atmosphere.
[0039] Process each sintered body obt...
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Abstract
The invention provides a method of using a boron diffusion source by which the time period to reoxidation treatment can be prolonged; and a process for producing a semiconductor using the method. The method comprises using a boron diffusion source made of a composite sinter comprising an Al2O3 ingredient, SiO2 ingredient, and BN ingredient in a non-oxidizing gas atmosphere having an oxygen concentration of 0.3-5 vol.%. The process for semiconductor production is characterized by: placing, in a furnace, a semiconductor wafer and a boron diffusion source made of a composite sinter which comprises an Al2O3 ingredient, SiO2 ingredient, and BN ingredient and in which the total content of the Al2O3 ingredient and SiO2 ingredient is 30-70 mass%, the content of the BN ingredient is 30-70 mass%, and the Al2O3 / SiO2 is 1.0-2.4 by mole; and heating them in a non-oxidizing gas atmosphere having an oxygen concentration of 0.3-5 vol.%.
Description
technical field [0001] The present invention relates to a method of using a boron diffusion source and a method of manufacturing a semiconductor using the boron diffusion source. Background technique [0002] In order to diffuse boron in semiconductor wafers such as germanium and silicon to form p-type semiconductors, the boron diffusion sources and semiconductor wafers are placed in a furnace (for example, arranged alternately at equal intervals) and heated in a non-oxidizing gas atmosphere. At this time, as the diffusion progresses, boron oxide as a boron diffusion source is consumed, and it becomes difficult to obtain uniform boron diffusion. Therefore, reoxidation treatment of the boron diffusion source is performed at an appropriate time to generate boron oxide on the surface, but this reoxidation treatment is time-consuming and laborious and increases the cost (Patent Document 1). [0003] Patent Document 1: Japanese Patent Laid-Open No. 2006-294964 Contents of the ...
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IPC IPC(8): H01L21/223
CPCH01L21/223H01L21/2225C04B35/10C04B35/583
Inventor 西川正人横田博
Owner DENKA CO LTD